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通过利用SiN/Ag异质结构支持的横向电极化波在室温下揭示WS单层中的缺陷束缚激子。

Revealing defect-bound excitons in WS monolayer at room temperature by exploiting the transverse electric polarized wave supported by a SiN/Ag heterostructure.

作者信息

Li Shulei, Deng Fu, Zhou Lidan, Lin Zhenxu, Panmai Mingcheng, Liu Shimei, Mao Yuheng, Luo Jinshan, Xiang Jin, Dai Jun, Zheng Yunbao, Lan Sheng

机构信息

School of Optoelectronic Engineering, Guangdong Polytechnic Normal University, Guangzhou 510665, China.

Department of Physics, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China.

出版信息

Nanophotonics. 2023 Nov 22;12(24):4485-4494. doi: 10.1515/nanoph-2023-0560. eCollection 2023 Dec.

Abstract

Two-dimensional (2D) transition metal dichalcogenide (TMDC) monolayers are promising materials for light-emitting devices due to their excellent electric and optical properties. However, defects are inevitably introduced in the fabrication of TMDC monolayers, significantly influencing their emission properties. Although photoluminescence (PL) is considered as an effective tool for investigating the defects in TMDC monolayers. However, the PL from the defect-bound excitons is revealed only at low temperatures. Here, we show that the PL from the defect-bound excitons in a WS monolayer can be effectively revealed at room temperature by exploiting the transverse electric polarized wave supported by a SiN/Ag heterostructure. It is revealed that the defect-bound excitons in all possible positions of the WS monolayer can be effectively excited by the TE wave with significantly enhanced in-plane electric field localized on the surface of the SiN layer. In addition, the emission from defect-bound excitons can propagate to the collection point with small attenuation. More importantly, the exciton dynamics in the WS monolayer can be modified by the SiN/Ag heterostructure, allowing the simultaneous excitation of neutral excitons, charge excitons (trions), and defect-bound excitons in the WS monolayer attached on the SiN/Ag heterostructure. We inspect the PL spectra obtained at different positions and find that the relative intensity of defect-bound excitons depends on the collection position. We also examine the dependences of the PL intensity and bandwidth on the excitation power for the three types of excitons. It is found that they exhibit different behaviors from those observed in the optical measurements by using the traditional excitation method. Our findings suggest a new way for exciting and studying the dynamics of multi-excitons at room temperature and indicate the potential applications of the TE wave in probing the defects in TMDC monolayers.

摘要

二维(2D)过渡金属二硫属化物(TMDC)单层由于其优异的电学和光学性质,是发光器件的有前途的材料。然而,在TMDC单层的制备过程中不可避免地会引入缺陷,这显著影响其发光性能。尽管光致发光(PL)被认为是研究TMDC单层中缺陷的有效工具。然而,仅在低温下才会揭示缺陷束缚激子的PL。在这里,我们表明,通过利用SiN/Ag异质结构支持的横向电极化波,可以在室温下有效地揭示WS单层中缺陷束缚激子的PL。结果表明,WS单层所有可能位置的缺陷束缚激子都可以被TE波有效激发,SiN层表面的面内电场显著增强。此外,缺陷束缚激子的发射可以以小衰减传播到收集点。更重要的是,SiN/Ag异质结构可以改变WS单层中的激子动力学,从而可以同时激发附着在SiN/Ag异质结构上的WS单层中的中性激子、电荷激子(三重态激子)和缺陷束缚激子。我们检查了在不同位置获得的PL光谱,发现缺陷束缚激子的相对强度取决于收集位置。我们还研究了三种激子的PL强度和带宽对激发功率的依赖性。发现它们表现出与使用传统激发方法的光学测量中观察到的不同行为。我们的发现为在室温下激发和研究多激子的动力学提供了一种新方法,并表明了TE波在探测TMDC单层中的缺陷方面的潜在应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aff8/11501904/ebbc30e1e1d7/j_nanoph-2023-0560_fig_001.jpg

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