Liang Qijie, Zhang Qian, Zhao Xiaoxu, Liu Meizhuang, Wee Andrew T S
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore.
Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore.
ACS Nano. 2021 Feb 23;15(2):2165-2181. doi: 10.1021/acsnano.0c09666. Epub 2021 Jan 15.
Atomic defects, being the most prevalent zero-dimensional topological defects, are ubiquitous in a wide range of 2D transition-metal dichalcogenides (TMDs). They could be intrinsic, formed during the initial sample growth, or created by postprocessing. Despite the majority of TMDs being largely unaffected after losing chalcogen atoms in the outermost layer, a spectrum of properties, including optical, electrical, and chemical properties, can be significantly modulated, and potentially invoke applicable functionalities utilized in many applications. Hence, controlling chalcogen atomic defects provides an alternative avenue for engineering a wide range of physical and chemical properties of 2D TMDs. In this article, we review recent progress on the role of chalcogen atomic defects in engineering 2D TMDs, with a particular focus on device performance improvements. Various approaches for creating chalcogen atomic defects including nonstoichiometric synthesis and postgrowth treatment, together with their characterization and interpretation are systematically overviewed. The tailoring of optical, electrical, and magnetic properties, along with the device performance enhancement in electronic, optoelectronic, chemical sensing, biomedical, and catalytic activity are discussed in detail. Postformation dynamic evolution and repair of chalcogen atomic defects are also introduced. Finally, we offer our perspective on the challenges and opportunities in this field.
原子缺陷作为最普遍的零维拓扑缺陷，在广泛的二维过渡金属二硫属化物（TMD）中无处不在。它们可能是本征的，在初始样品生长过程中形成，也可能是通过后处理产生的。尽管大多数TMD在失去最外层的硫属原子后基本不受影响，但包括光学、电学和化学性质在内的一系列性质会受到显著调制，并有可能引发许多应用中使用的适用功能。因此，控制硫属原子缺陷为调控二维TMD的多种物理和化学性质提供了一条替代途径。在本文中，我们综述了硫属原子缺陷在二维TMD工程中的作用方面的最新进展，特别关注器件性能的提升。系统地概述了包括非化学计量合成和生长后处理在内的产生硫属原子缺陷的各种方法，以及它们的表征和解释。详细讨论了光学、电学和磁学性质的调控，以及在电子、光电子、化学传感、生物医学和催化活性方面器件性能的增强。还介绍了硫属原子缺陷形成后的动态演化和修复。最后，我们对该领域的挑战和机遇发表了看法。
