Günay Mehmet, Das Priyam, Yüce Emre, Polat Emre Ozan, Bek Alpan, Tasgin Mehmet Emre
Department of Nanoscience and Nanotechnology, Faculty of Arts and Science, Mehmet Akif Ersoy University, 15030 Burdur, Türkiye.
Department of Physics, Bankura Sammilani College, Kenduadihi, Bankura, WB 722101, India.
Nanophotonics. 2023 Jan 18;12(2):229-237. doi: 10.1515/nanoph-2022-0555. eCollection 2023 Jan.
Integration of devices generating non-classical states (such as entanglement) into photonic circuits is one of the major goals in achieving integrated quantum circuits (IQCs). This is demonstrated successfully in recent decades. Controlling the non-classicality generation in these micron-scale devices is also crucial for the robust operation of the IQCs. Here, we propose a micron-scale quantum entanglement device whose nonlinearity (so the generated non-classicality) can be tuned by several orders of magnitude via an without altering the linear response. Quantum emitters (QEs), whose level-spacing can be tuned by voltage, are embedded into the hotspot of a metal nanostructure (MNS). QE-MNS coupling introduces a Fano resonance in the "nonlinear response". Nonlinearity, already enhanced extremely due to localization, can be controlled by the QEs' level-spacing. Nonlinearity can either be suppressed or be further enhanced by several orders. Fano resonance takes place in a relatively narrow frequency window so that ∼meV voltage-tunability for QEs becomes sufficient for a turning on/off of the non-classicality. This provides as much as 5 orders of magnitude modulation depths.
将产生非经典态(如纠缠态)的器件集成到光子电路中是实现集成量子电路(IQC)的主要目标之一。近几十年来,这一点已得到成功证明。控制这些微米级器件中的非经典性产生对于IQC的稳健运行也至关重要。在此,我们提出一种微米级量子纠缠器件,其非线性(即产生的非经典性)可通过一个[未提及的方式]在不改变线性响应的情况下进行几个数量级的调谐。能级间距可通过电压调谐的量子发射器(QE)被嵌入到金属纳米结构(MNS)的热点区域。QE - MNS耦合在“非线性响应”中引入了法诺共振。由于局域化,非线性已经极大增强,可通过QE的能级间距进行控制。非线性既可以被抑制,也可以进一步增强几个数量级。法诺共振发生在相对较窄的频率窗口内,因此对于QE而言,约meV的电压可调性就足以实现非经典性的开启/关闭。这提供了高达5个数量级的调制深度。