Yan Pingyuan, Li Tao, Zhou Haoxiang, Hu Shu, Xiang Chenhong, Zhang Yang, Wang Chengqiang, Wu Zihan, Li Heng, Zhao Haibin, Sheng ChuanXiang
Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai, 200433, China.
School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
Nanophotonics. 2023 Apr 20;12(11):1965-1977. doi: 10.1515/nanoph-2023-0015. eCollection 2023 May.
We have studied four 2D layered perovskites, including OAPbI (RP phase), ODAPbI and BDAPbI (DJ phase), (GA)MAPbI (ACI phase), where OA is [(C H)NH]( = 8), ODA is [NH(CH) NH]( = 8), BDA is [NH(CH) NH]( = 4), and GA is [C(NH)]; RP, DJ, and ACI means Ruddlesden-Popper, Dion-Jacobson and alternating cations in the interlayer, respectively. The temperature dependence of absorption and photoluminescence (PL) spectra have been measured. From which the average phonon energy (electron-phonon interaction strength) is analyzed as around 34 (80), 47 (184), 50 (402), and 63 (758) with the unit of meV for OAPbI, ODAPbI BDAPbI, and (GA)MAPbI, respectively. Larger phonon energy indicates the involvement of more phonons in organic spacer layer, with the corresponding stronger electron-phonon interaction. Furthermore, ultrafast transient absorption spectroscopy proves that, when the excitation photon energy is serval hundred meV higher than bandgap, the excitons still are the major photoexcitations in OAPbI, but polarons are major one in ODAPbI, BDAPbI, and (GA)MAPbI films, no matter the excitonic transitions dominate the absorption at their band edges. This work proves the organic spacers can regulate electron-phonon interaction then optoelectronic properties in 2D perovskites profoundly, which have implications toward future rational design for relevant devices.
我们研究了四种二维层状钙钛矿,包括OAPbI(RP相)、ODAPbI和BDAPbI(DJ相)、(GA)MAPbI(ACI相),其中OA为[(C₈H₁₇)₂NH₂],ODA为[NH₂(CH₂)₈NH₂],BDA为[NH₂(CH₂)₄NH₂],GA为[C(NH₂)₃];RP、DJ和ACI分别表示层间的Ruddlesden-Popper、Dion-Jacobson和交替阳离子。测量了吸收光谱和光致发光(PL)光谱的温度依赖性。据此分析得出,OAPbI、ODAPbI、BDAPbI和(GA)MAPbI的平均声子能量(电子-声子相互作用强度)分别约为34(80)、47(184)、50(402)和63(758),单位为meV。较大的声子能量表明有机间隔层中有更多声子参与,相应地电子-声子相互作用更强。此外,超快瞬态吸收光谱证明,当激发光子能量比带隙高几百meV时,激子仍是OAPbI中的主要光激发,但在ODAPbI、BDAPbI和(GA)MAPbI薄膜中极化子是主要的光激发,无论激子跃迁在其带边吸收中是否占主导。这项工作证明了有机间隔层可以深刻地调节二维钙钛矿中的电子-声子相互作用进而调控其光电性质,这对相关器件的未来合理设计具有重要意义。