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中空阴极气流溅射技术沉积透明导电钽掺杂二氧化锡薄膜的工艺

Protocol for depositing transparent conductive Ta-doped SnO film by hollow cathode gas flow sputtering technology.

作者信息

Huo Fangfang, Hartig Manuel, Otto Seibertz Bertwin Bilgrim, Alktash Nivin, Muydninov Ruslan, Wang Can, Gao Peng, Szyszka Bernd

机构信息

Institute für High-Frequency and Semiconductor-System Technologies, Technische Universität Berlin, Einsteinufer 25, 10587 Berlin, Germany.

Institute für High-Frequency and Semiconductor-System Technologies, Technische Universität Berlin, Einsteinufer 25, 10587 Berlin, Germany; PvcomB, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Schwarzschildstraße 3, 12489 Berlin, Germany.

出版信息

STAR Protoc. 2024 Dec 20;5(4):103489. doi: 10.1016/j.xpro.2024.103489. Epub 2024 Dec 7.

Abstract

Transparent conductive Ta-doped SnO (SnO: Ta) thin film with low surface roughness, low resistivity, and high carrier concentration is one potential alternative of commercial transparent conductive oxides (TCOs). Here, we present a protocol for fabricating tin oxide films by hollow cathode gas flow sputtering technology. We describe steps for preparing and cleaning substrate, and film deposition process on the fresh uncorroded float glass substrate. We then detail procedures for measuring the optical and electrical properties of the film. For complete details on the use and execution of this protocol, please refer to Huo et al..

摘要

具有低表面粗糙度、低电阻率和高载流子浓度的透明导电钽掺杂二氧化锡(SnO₂:Ta)薄膜是商用透明导电氧化物(TCOs)的一种潜在替代品。在此,我们展示了一种通过空心阴极气体流动溅射技术制备氧化锡薄膜的方案。我们描述了制备和清洁衬底的步骤,以及在新鲜未腐蚀的浮法玻璃衬底上的薄膜沉积过程。然后,我们详细说明了测量薄膜光学和电学性质的程序。有关此方案的使用和执行的完整详细信息,请参考 Huo 等人的研究。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7f86/11666947/4c8681e929d2/fx1.jpg

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