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高温扩散实现的Ti-O系统外延生长

High-Temperature Diffusion Enabled Epitaxy of the Ti-O System.

作者信息

Kim Jeong Rae, Glotzer Sandra, Llanos Adrian, Salmani-Rezaie Salva, Falson Joseph

机构信息

Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA, 91125, USA.

Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, CA, 91125, USA.

出版信息

Adv Mater. 2025 Feb;37(5):e2413447. doi: 10.1002/adma.202413447. Epub 2024 Dec 10.

Abstract

High temperatures promote kinetic processes that can drive crystal synthesis toward ideal thermodynamic conditions, thereby realizing samples of superior quality. While accessing very high temperatures in thin-film epitaxy is becoming increasingly accessible through laser-based heating methods, demonstrations of such utility are still emerging. The study realizes a novel self-regulated growth mode in the Ti-O system by relying on thermally activated diffusion of oxygen from an oxide substrate. The controlled diffusion enables oxidation state selectivity of single-phase films with superior crystallinity to conventional approaches as evidenced by structural and electronic measurements. The diffusion-enabled epitaxy is potentially of wide use in the growth of transition metal oxides, opening up new opportunities for ultra-high purity epitaxial platforms based on d-orbital systems.

摘要

高温促进动力学过程,该过程可推动晶体合成趋向理想的热力学条件,从而实现高质量的样品。虽然通过基于激光的加热方法在薄膜外延中实现非常高的温度越来越容易,但此类应用的实例仍在不断涌现。该研究通过依赖氧从氧化物衬底的热激活扩散,在Ti-O系统中实现了一种新型的自调节生长模式。如结构和电子测量所示,受控扩散使单相薄膜的氧化态选择性优于传统方法,具有更高的结晶度。这种基于扩散的外延在过渡金属氧化物的生长中具有广泛的应用潜力,为基于d轨道系统的超高纯度外延平台开辟了新机遇。

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