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DyMnO₃ 纳米晶体中电场诱导畴结构的成像

Imaging of electric-field-induced domain structure in DyMnO nanocrystals.

作者信息

Najeeb Mansoor A, Morrison Robbie, Mokhtar Ahmed H, Porter Daniel G, Lichtenberg Frank, Bombardi Alessandro, Newton Marcus C

机构信息

Department of Physics and Astronomy, University of Southampton, Southampton, SO17 1BJ, UK.

Diamond Light Source, Harwell Oxford Campus, Didcot, OX11 0DE, UK.

出版信息

Discov Nano. 2024 Dec 15;19(1):203. doi: 10.1186/s11671-024-04165-8.

Abstract

Multiferroic materials that exhibit interacting and coexisting properties, like ferroelectricity and ferromagnetism, possess significant potential in the development of novel technologies that can be controlled through the application of external fields. They also exhibit varying regions of polarity, known as domains, with the interfaces that separate the domains referred to as domain walls. In this study, using three-dimensional (3D) bragg coherent diffractive imaging (BCDI), we investigate the dynamics of multiferroic domain walls in a single hexagonal dysprosium manganite (h-DyMnO ) nanocrystal under varying applied electric field. Our analysis reveals that domain wall motion is influenced by the pinning effects, and a threshold voltage of +3 V is required to overcome them. Using circular mean analysis and phase gradient mapping, we identified localised phase realignment and high-gradient regions corresponding to domain walls, providing insights into the behaviour of multiferroic systems under external stimuli.

摘要

具有铁电性和铁磁性等相互作用且共存特性的多铁性材料,在可通过外部场施加进行控制的新技术开发中具有巨大潜力。它们还表现出不同的极性区域,称为畴,分隔这些畴的界面称为畴壁。在本研究中,我们使用三维(3D)布拉格相干衍射成像(BCDI),研究了在不同外加电场下,单个六方镝锰氧化物(h-DyMnO )纳米晶体中多铁性畴壁的动力学。我们的分析表明,畴壁运动受钉扎效应影响,需要 +3 V 的阈值电压来克服这些效应。通过圆均值分析和相位梯度映射,我们确定了与畴壁相对应的局部相位重新排列和高梯度区域,从而深入了解了多铁性系统在外部刺激下的行为。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/af80/11646962/4fceb1c69929/11671_2024_4165_Fig1_HTML.jpg

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