单晶硅的绿色化学剪切增稠抛光

Green Chemical Shear-Thickening Polishing of Monocrystalline Silicon.

作者信息

Xie Jiancheng, Shi Feng, Wang Shanshan, Peng Xing, Hao Qun

机构信息

School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China.

National Key Laboratory on Near-Surface Detection, Beijing 100072, China.

出版信息

Nanomaterials (Basel). 2024 Nov 21;14(23):1866. doi: 10.3390/nano14231866.

DOI:10.3390/nano14231866

PMID:39683254

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11643686/

Abstract

A green chemical shear-thickening polishing (GC-STP) method was studied to improve the surface precision and processing efficiency of monocrystalline silicon. A novel green shear-thickening polishing slurry composed of silica nanoparticles, alumina abrasive, sorbitol, plant ash, polyethylene glycol, and deionized water was formulated. The monocrystalline silicon was roughly ground using a diamond polishing slurry and then the GC-STP process. The material removal rate (MRR) during GC-STP was 4.568 μmh. The material removal mechanism during the processing of monocrystalline silicon via GC-STP was studied using elemental energy spectroscopy and FTIR spectroscopy. After 4 h of the GC-STP process, the surface roughness (Ra) of the monocrystalline silicon wafer was reduced to 0.278 nm, and an excellent monocrystalline silicon surface quality was obtained. This study shows that GC-STP is a green, efficient, and low-damage polishing method for monocrystalline silicon.

摘要

为提高单晶硅的表面精度和加工效率，研究了一种绿色化学剪切增稠抛光（GC-STP）方法。配制了一种由二氧化硅纳米颗粒、氧化铝磨料、山梨醇、植物灰、聚乙二醇和去离子水组成的新型绿色剪切增稠抛光液。先用金刚石抛光液对单晶硅进行粗磨，然后进行GC-STP工艺。GC-STP过程中的材料去除率（MRR）为4.568μm/h。利用能谱和傅里叶变换红外光谱（FTIR）研究了GC-STP加工单晶硅的材料去除机理。经过4小时的GC-STP工艺后，单晶硅片的表面粗糙度（Ra）降至0.278nm，获得了优异的单晶硅表面质量。本研究表明，GC-STP是一种用于单晶硅的绿色、高效且低损伤的抛光方法。