Xie Jiancheng, Shi Feng, Wang Shanshan, Peng Xing, Hao Qun
School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China.
National Key Laboratory on Near-Surface Detection, Beijing 100072, China.
Nanomaterials (Basel). 2024 Nov 21;14(23):1866. doi: 10.3390/nano14231866.
A green chemical shear-thickening polishing (GC-STP) method was studied to improve the surface precision and processing efficiency of monocrystalline silicon. A novel green shear-thickening polishing slurry composed of silica nanoparticles, alumina abrasive, sorbitol, plant ash, polyethylene glycol, and deionized water was formulated. The monocrystalline silicon was roughly ground using a diamond polishing slurry and then the GC-STP process. The material removal rate (MRR) during GC-STP was 4.568 μmh. The material removal mechanism during the processing of monocrystalline silicon via GC-STP was studied using elemental energy spectroscopy and FTIR spectroscopy. After 4 h of the GC-STP process, the surface roughness (Ra) of the monocrystalline silicon wafer was reduced to 0.278 nm, and an excellent monocrystalline silicon surface quality was obtained. This study shows that GC-STP is a green, efficient, and low-damage polishing method for monocrystalline silicon.
为提高单晶硅的表面精度和加工效率，研究了一种绿色化学剪切增稠抛光（GC-STP）方法。配制了一种由二氧化硅纳米颗粒、氧化铝磨料、山梨醇、植物灰、聚乙二醇和去离子水组成的新型绿色剪切增稠抛光液。先用金刚石抛光液对单晶硅进行粗磨，然后进行GC-STP工艺。GC-STP过程中的材料去除率（MRR）为4.568μm/h。利用能谱和傅里叶变换红外光谱（FTIR）研究了GC-STP加工单晶硅的材料去除机理。经过4小时的GC-STP工艺后，单晶硅片的表面粗糙度（Ra）降至0.278nm，获得了优异的单晶硅表面质量。本研究表明，GC-STP是一种用于单晶硅的绿色、高效且低损伤的抛光方法。
