Zhang Guoyu, Li Lu, Nan Yanxin, Li Peng, Deng Tao, Lei Zhipeng, Li Yuanyuan, Zhang Jianhua
Shanxi Key Laboratory of Mining Electrical Equipment and Intelligent Control, National & Provincial Joint Engineering Laboratory of Mining Intelligent Electrical Apparatus Technology, College of Electrical and Power Engineering, Taiyuan University of Technology, No. 79 Yingze West Avenue, Wanbailin District, Taiyuan 030024, China.
Materials (Basel). 2024 Nov 27;17(23):5824. doi: 10.3390/ma17235824.
In this work, the effects of different sintering temperatures and TiO concentrations on the dielectric properties of ZrO and NbO pre-doped CaCuTiO (CCTO) ceramics were investigated. These doped ceramics were sintered at temperatures of 1020, 1030, and 1040 °C, exhibiting the lowest dielectric loss of 0.01, which consistently remained below 0.03 across a wide frequency range from 10 to 10 Hz. Simultaneously, they maintained a high dielectric constant of more than 3000 and remarkably met the requirements for an X8P capacitor (Δε' ≤ ±10% at temperature range from -55 to 150 °C). It was clarified that TiO doping increased grain boundary resistance, leading to the reduced dielectric loss, and elevated the grain boundary activation energy, thereby enhancing the temperature stability. The TiO-doped CCTO-based ceramics also demonstrated reduced sensitivity to variations in sintering temperature, highlighting their excellent manufacturability. This characteristic holds great promise for the fabrication of CCTO-based ceramics, which usually exhibit poor repetitiveness.
在本工作中，研究了不同烧结温度和TiO浓度对预掺杂ZrO和NbO的CaCuTiO（CCTO）陶瓷介电性能的影响。这些掺杂陶瓷在1020、1030和1040℃的温度下烧结，表现出最低的介电损耗0.01，在10至10 Hz的宽频率范围内始终保持在0.03以下。同时，它们保持了高于3000的高介电常数，并显著满足X8P电容器的要求（在-55至150℃的温度范围内，Δε'≤±10%）。结果表明，TiO掺杂增加了晶界电阻，导致介电损耗降低，并提高了晶界活化能，从而增强了温度稳定性。TiO掺杂的CCTO基陶瓷对烧结温度变化的敏感性也较低，突出了其优异的可制造性。这一特性对于通常重复性较差的CCTO基陶瓷的制造具有很大的前景。
