Zhang Yongzhi, He Xunjun
Key Laboratory of Engineering Dielectric and Applications (Ministry of Education), School of Electrical and Electronic Engineering, Harbin University of Science and Technology, Harbin 150080, China.
ACS Appl Mater Interfaces. 2025 Jan 8;17(1):1826-1833. doi: 10.1021/acsami.4c13818. Epub 2024 Dec 19.
Fast-response photodetectors have attracted considerable attention in the application of high-speed communication, real-time monitoring, and optical imaging systems. However, most reported photodetectors suffer from limitations of the inherent properties of materials, low carrier transport efficiency, and unmatched interfaces, which lead to a low response speed. Here, we report a WS/graphene/MoS vertical van der Waals heterojunction fabricated by mechanical exfoliation and dry transfer methods for fast response. To improve the response speed of the previously reported WS/MoS heterojunction with excellent photoelectric performances, the embedded graphene is employed to optimize the interface defects and improve the carrier transport efficiency due to its high mobility and smooth and flat surface. Under the illuminations of a 405 nm laser and a bias voltage of 0.5 V, our device can realize rise and fall times of 44 and 52 μs, respectively. For a bias voltage of 2.5 V, moreover, the device can also show outstanding performances including a high responsivity of 220 A/W, a considerable detectivity of 1.2 × 10 Jones, a large external quantum efficiency of 6.7 × 10 %, and a low dark current of 1.05 × 10 A. Additionally, the device enables high-speed transmission with a low bit error rate in a closed-loop optical communication system. Therefore, the proposed scheme can provide an idea for the design of photodetectors with fast response and high performance.
快速响应光电探测器在高速通信、实时监测和光学成像系统的应用中引起了广泛关注。然而,大多数已报道的光电探测器存在材料固有特性的限制、低载流子传输效率以及不匹配的界面等问题,这些导致了低响应速度。在此,我们报道一种通过机械剥离和干法转移方法制备的用于快速响应的WS/石墨烯/MoS垂直范德华异质结。为了提高先前报道的具有优异光电性能的WS/MoS异质结的响应速度,引入石墨烯以优化界面缺陷并提高载流子传输效率,这归因于其高迁移率以及光滑平坦的表面。在405 nm激光照射和0.5 V偏置电压下,我们的器件能够分别实现44 μs和52 μs的上升和下降时间。此外,对于2.5 V的偏置电压,该器件还能展现出出色的性能,包括220 A/W的高响应度、1.2×10 Jones的可观探测率、6.7×10%的大外部量子效率以及1.05×10 A的低暗电流。此外,该器件在闭环光通信系统中能够实现低误码率的高速传输。因此,所提出的方案可为设计具有快速响应和高性能的光电探测器提供思路。