Chen Jiale, Li Jiaxiong, Pau Riccardo, Chen Lijun, Kot Mordchai, Wang Han, Mario Lorenzo Di, Portale Giuseppe, Loi Maria Antonietta
Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 3, Groningen, 9747 AG, The Netherlands.
Adv Mater. 2025 Jun;37(25):e2415958. doi: 10.1002/adma.202415958. Epub 2024 Dec 20.
In recent years, metal halide perovskite-based light-emitting diodes (LEDs) have garnered significant attention as they display high quantum efficiency, good spectral tunability, and are expected to have low processing costs. When the peak emission wavelength is beyond 900 nm the interest is even higher because of the critical importance of this wavelength for biomedical imaging, night vision, and sensing. However, many challenges persist in fabricating these high-performance NIR LEDs, particularly for wavelengths above 950 nm, which appear to be limited by low radiance and poor stability. In this study, 3-(aminomethyl) piperidinium (3-AMP) is employed as a bulk additive for a tin-lead halide perovskite. The 3-AMP passivated films exhibit a significantly longer carrier lifetime of over 1 µs compared to neat films (0.43 µs) or to those passivated with a perfluorinated aromatic mono-ammonium molecule (0.41 µs). Our optimized tin-lead halide perovskite-based LEDs show a single emission peak at 988 nm and an external quantum efficiency (EQE) of ≈1.4%.
近年来，基于金属卤化物钙钛矿的发光二极管（LED）因其具有高量子效率、良好的光谱可调性且有望实现低成本加工而备受关注。当峰值发射波长超过900nm时，由于该波长在生物医学成像、夜视和传感方面的至关重要性，人们的兴趣更高。然而，制造这些高性能近红外LED仍存在许多挑战，特别是对于波长超过950nm的情况，这似乎受到低辐射率和稳定性差的限制。在本研究中，3-（氨甲基）哌啶（3-AMP）被用作锡铅卤化物钙钛矿的体相添加剂。与纯薄膜（0.43µs）或用全氟芳族单铵分子钝化的薄膜（0.41µs）相比，3-AMP钝化薄膜表现出明显更长的超过1µs的载流子寿命。我们优化的基于锡铅卤化物钙钛矿的LED在988nm处显示出单一发射峰，外部量子效率（EQE）约为1.4%。
