Tang Yanting, Zhou Bowen, Liu Jingyao, Chen Xinyi, Wang Haizhen, Hu Zhixiang, Mao Rongyu, Xing Yingying, Li Hua-Yao, Li Dehui, Liu Huan
School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Optics Valley Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.
ACS Sens. 2025 Jan 24;10(1):320-328. doi: 10.1021/acssensors.4c02517. Epub 2024 Dec 24.
Mastering the surface chemistry of quantum dots (QDs) has enabled a remarkable gas-sensing response as well as impressive air stability. To overcome the intrinsic receptor-transducer mismatch of QDs, PbS QDs used as sensitive NO receptors are spin-coated on top of a few-layer MoS and incorporated into a thin-film transistor (TFT) gas sensor. This architecture enables the separation of the electron transduction function from the chemical reception function. A comparison study through size engineering of QDs combined with TFT device modeling suggests a unique dual-gate modulation related to the capacitance coupling effect of QDs. The favorable increase in sensor output current by 3 orders of magnitude is ascribed to the high mobility of the few-layer MoS. The optimal sensor exhibits a sensitive (LOD ∼ 0.6 ppb), selective, and recoverable response at room temperature. Because of the dual-gate modulation, the sensor performance is further optimized by varying the gate voltage (a two-fold increase in response to 1 ppm of NO).
掌握量子点（QD）的表面化学性质，实现了卓越的气敏响应以及令人印象深刻的空气稳定性。为了克服量子点固有的受体 - 换能器不匹配问题，用作敏感NO受体的PbS量子点旋涂在几层MoS顶部，并集成到薄膜晶体管（TFT）气体传感器中。这种架构能够将电子转导功能与化学接收功能分离。通过量子点尺寸工程与TFT器件建模相结合的比较研究表明，存在与量子点电容耦合效应相关的独特双栅调制。传感器输出电流有利地增加3个数量级，归因于几层MoS的高迁移率。最佳传感器在室温下表现出灵敏（检测限约为0.6 ppb）、选择性和可恢复的响应。由于双栅调制，通过改变栅极电压进一步优化了传感器性能（对1 ppm NO的响应增加了两倍）。
