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在硒和锡-硒环境中采用顺序退火法优化CZTSe薄膜

Optimization of CZTSe Thin Films Using Sequential Annealing in Selenium and Tin-Selenium Environments.

作者信息

Zaki Mohamed Y, Sava Florinel, Simandan Iosif D, Stavarache Ionel, Velea Alin, Pintilie Lucian

机构信息

Laboratory of Complex Heterostructures and Multifunctional Materials, National Institute of Materials Physics, Atomistilor 405A, Magurele 077125, Romania.

Laboratory of Optical Processes in Nanostructured Materials, National Institute of Materials Physics, Atomistilor 405A, Magurele 077125, Romania.

出版信息

Inorg Chem. 2025 Jan 13;64(1):1-10. doi: 10.1021/acs.inorgchem.4c04082. Epub 2024 Dec 26.

Abstract

CuZnSnSe (CZTSe) is a promising material for thin-film solar cells due to its suitable band gap, high absorption coefficient, and composition of earth-abundant and nontoxic elements. In this study, we prepared CZTSe thin films from Cu/SnSe and ZnSe stacks using a two-step annealing process. Initially, Cu-Sn-Se (CTSe) films were synthesized by sequential deposition and annealing of Cu and SnSe precursors in either a selenium (Se) or tin-selenium (Sn+Se) atmosphere. After the deposition of a ZnSe layer on top of CTSe films, the stack underwent a second annealing process, again in either a Se or Sn+Se atmosphere, resulting in four distinct annealing combinations: Se→Se, Sn+Se→Se, Se→Sn+Se, and Sn+Se→Sn+Se. The first annealing step enabled the formation of CTSe, while the second annealing step, performed after ZnSe deposition, led to the formation of the CZTSe phase. Comprehensive characterization including grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), and electrical measurements was conducted. GIXRD and Raman analysis revealed kesterite CZTSe phase peaks, with some samples showing a split in the main peak at ∼27° (2θ), indicating the presence of CuSe and ZnSe secondary phases. SEM analysis showed the impact of Sn and Se annealing on grain size, with larger grains observed in films annealed in Sn+Se atmospheres, particularly in the second heat treatment process. EDS results displayed consistent elemental composition across samples, with varying Cu/(Zn+Sn), Zn/Sn and Se/metal ratios influencing the band gap values from 1.09 to 1.63 eV. Hall measurements indicated p-type conductivity with carrier concentrations between 10 and 10 cm. These results highlight the effectiveness of our two-step annealing process, particularly the Sn+Se atmosphere, in optimizing CZTSe thin films for potential use in high-efficiency thin-film solar cells.

摘要

由于其合适的带隙、高吸收系数以及由地球上储量丰富且无毒的元素组成,CuZnSnSe(CZTSe)是一种很有前景的用于薄膜太阳能电池的材料。在本研究中,我们使用两步退火工艺从Cu/SnSe和ZnSe叠层制备了CZTSe薄膜。最初,通过在硒(Se)或锡 - 硒(Sn + Se)气氛中依次沉积和退火Cu和SnSe前驱体来合成Cu - Sn - Se(CTSe)薄膜。在CTSe薄膜顶部沉积ZnSe层后,该叠层再次在Se或Sn + Se气氛中进行第二次退火工艺,产生四种不同的退火组合:Se→Se、Sn + Se→Se、Se→Sn + Se和Sn + Se→Sn + Se。第一步退火使得CTSe形成,而在ZnSe沉积后进行的第二步退火导致了CZTSe相的形成。进行了包括掠入射X射线衍射(GIXRD)、拉曼光谱、扫描电子显微镜(SEM)、能量色散X射线光谱(EDS)和电学测量在内的综合表征。GIXRD和拉曼分析揭示了纤锌矿型CZTSe相峰,一些样品在约27°(2θ)处的主峰出现分裂,表明存在CuSe和ZnSe次生相。SEM分析显示了Sn和Se退火对晶粒尺寸的影响,在Sn + Se气氛中退火的薄膜中观察到更大的晶粒,特别是在第二次热处理过程中。EDS结果显示各样品的元素组成一致,不同的Cu/(Zn + Sn)、Zn/Sn和Se/金属比影响带隙值在1.09至1.63 eV之间。霍尔测量表明具有p型导电性,载流子浓度在10至10 cm之间。这些结果突出了我们的两步退火工艺,特别是Sn + Se气氛,在优化CZTSe薄膜以用于高效薄膜太阳能电池潜在应用方面的有效性。

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