Pan Zhiguang, Huang Hao, Wang Yanwei, Wang Tianqi, Yu Hui, Ma Qianli, Dong Xiangting, Yang Ying
Key Laboratory of Applied Chemistry and Nanotechnology at University of Jilin Province, Changchun University of Science and Technology, Changchun, 130022, China.
Key Laboratory of Applied Chemistry and Nanotechnology at University of Jilin Province, Changchun University of Science and Technology, Changchun, 130022, China.
Talanta. 2025 May 1;286:127449. doi: 10.1016/j.talanta.2024.127449. Epub 2024 Dec 20.
Perovskite-structured materials are used as gas-sensitive materials due to their wide bandgap and controllable morphology, but large initial resistance and low response limit their development. In this work, ZnSn(OH)/ZnO composites derived from ZnO were synthesized by hydrothermal method. The gas-sensitive results show that all sensors show significantly improved response to NO under UV irradiation compared with without UV irradiation. Notably, under UV irradiation the operating temperatures of sensors are reduced from 110 °C to room temperature and have a low initial resistance. Compared with bare ZnO, the ZnSn(OH)/ZnO-7 sensor shows a 4.4-fold improvement in response to 10 ppm NO under UV irradiation at room temperature and has response/recovery time (54.5/74 s). Meanwhile, the ZnSn(OH)/ZnO-7 sensor has a practical detection limit of 50 ppb and a theoretical detection limit of 9.86 ppb, which enable efficient detection of trace NO. The excellent gas-sensitive performance of the ZnSn(OH)/ZnO sensors can be attributed to the highly efficient photogenerated carrier separation efficiency, the special morphology, high oxygen vacancy content and the construction of numerous heterostructures. Therefore, the ZnSn(OH)/ZnO sensors provide insights into the realization of high-performance perovskite-structured NO sensors under UV irradiation at room temperature.
钙钛矿结构材料由于其宽带隙和可控的形貌而被用作气敏材料,但大的初始电阻和低响应性限制了它们的发展。在这项工作中,通过水热法合成了由ZnO衍生的ZnSn(OH)/ZnO复合材料。气敏结果表明,与无紫外光照射相比,所有传感器在紫外光照射下对NO的响应均显著提高。值得注意的是,在紫外光照射下,传感器的工作温度从110℃降至室温,且初始电阻较低。与裸ZnO相比,ZnSn(OH)/ZnO-7传感器在室温紫外光照射下对10 ppm NO的响应提高了4.4倍,响应/恢复时间为(54.5/74 s)。同时,ZnSn(OH)/ZnO-7传感器的实际检测限为50 ppb,理论检测限为9.86 ppb,能够高效检测痕量NO。ZnSn(OH)/ZnO传感器优异的气敏性能可归因于高效的光生载流子分离效率、特殊的形貌、高氧空位含量以及众多异质结构的构建。因此,ZnSn(OH)/ZnO传感器为室温紫外光照射下高性能钙钛矿结构NO传感器的实现提供了思路。