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用于计算二维半导体异质结构中杂质态的数值方法。

Numerical proceeding to calculate impurity states in 2D semiconductor heterostructures.

作者信息

Akimov Volodymyr, Tulupenko Viktor, Demediuk Roman, Tiutiunnyk Anton, Duque Carlos A, Morales Alvaro L, Laroze David, Mora-Ramos Miguel Eduardo

机构信息

Facultad de Ciencias Básicas, Universidad de Medellín, Medellín, Colombia.

Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, 050010, Colombia.

出版信息

Sci Rep. 2024 Dec 28;14(1):30810. doi: 10.1038/s41598-024-81346-6.

DOI:10.1038/s41598-024-81346-6
PMID:39730546
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11680771/
Abstract

The article provides and discusses details of numerical proceeding for the expansion method to calculate energy positions and wave functions of the localized and resonant electronic states emerging in quantum well-type semiconductor nanostructures because of perturbation of confined states by the Coulomb potential of the hydrogenic impurity center. Effective mass approximation is used. Several excited both resonant and non-resonant states are calculated and classified for the case of a simple rectangular GaAs/AlGaAs quantum well. Results are compared to the ones in literature.

摘要

本文给出并讨论了一种展开方法的数值计算细节，该方法用于计算量子阱型半导体纳米结构中由于类氢杂质中心的库仑势对受限态的微扰而出现的局域和共振电子态的能量位置及波函数。采用了有效质量近似。针对简单矩形GaAs/AlGaAs量子阱的情况，计算并分类了几个激发的共振态和非共振态。将结果与文献中的结果进行了比较。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef5d/11680771/2c86d742f296/41598_2024_81346_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef5d/11680771/e4bb1dd5df53/41598_2024_81346_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef5d/11680771/7a223bf18c0f/41598_2024_81346_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef5d/11680771/ba729742117b/41598_2024_81346_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef5d/11680771/e8e419e02f68/41598_2024_81346_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef5d/11680771/2c86d742f296/41598_2024_81346_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef5d/11680771/e4bb1dd5df53/41598_2024_81346_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef5d/11680771/7a223bf18c0f/41598_2024_81346_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef5d/11680771/ba729742117b/41598_2024_81346_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef5d/11680771/e8e419e02f68/41598_2024_81346_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef5d/11680771/2c86d742f296/41598_2024_81346_Fig5_HTML.jpg

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引用本文的文献

1
Resonant and Non-Resonant Impurity States Related to GaAs/AlGaAs Quantum Well Sub-Bands.与GaAs/AlGaAs量子阱子能带相关的共振和非共振杂质态
Materials (Basel). 2024 Dec 24;18(1):17. doi: 10.3390/ma18010017.

本文引用的文献

1
2D Semiconductor Nanomaterials and Heterostructures: Controlled Synthesis and Functional Applications.二维半导体纳米材料与异质结构：可控合成及功能应用
Nanoscale Res Lett. 2021 May 25;16(1):94. doi: 10.1186/s11671-021-03551-w.
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Calculated shallow-donor-level binding energies in GaAs-AlxGa1-xAs quantum wells.
Phys Rev B Condens Matter. 1989 Oct 15;40(12):8466-8472. doi: 10.1103/physrevb.40.8466.
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Density of states and energy spectra of hydrogenic impurities in quantum-well wires.
Phys Rev B Condens Matter. 1988 Jul 15;38(3):2179-2182. doi: 10.1103/physrevb.38.2179.
4
Shallow-impurity states in semiconductor quantum-well structures.
Phys Rev B Condens Matter. 1985 Feb 15;31(4):2348-2352. doi: 10.1103/physrevb.31.2348.