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杂质对黄铜矿AgInSe纳米蝌蚪的结合能、抗磁磁化率和光电离截面的影响

Impurity effects on binding energy, diamagnetic susceptibility and photoionization cross-section of chalcopyrite AgInSenanotadpole.

作者信息

Mantashian Grigor A, Hayrapetyan David B

机构信息

Department of General Physics and Quantum Nanostructures, Russian-Armenian University, Yerevan, Armenia.

出版信息

J Phys Condens Matter. 2022 Apr 13;34(24). doi: 10.1088/1361-648X/ac606b.

DOI:10.1088/1361-648X/ac606b
PMID:35320781
Abstract

Recently the interest in chalcopyrite semiconductor nanostructures has increased because of their non-toxicity and their wide direct bandgap. Likewise, structures with non-trivial geometry are particularly interesting because of their electronic, optical, and magnetic properties. In the current article, the finite element method was used in conjunction with the effective mass approximation to theoretically investigate the properties of a chalcopyrite AgInSenanotadpole in the presence of an hydrogen like shallow off-center impurity. The morphology of the nanotadpole gives it excellent hydrodynamic properties and is ideal for a wide range of applications. The probability densities for various impurity positions and energy levels were obtained. The results suggested a strong dependence of the behavior of the electron on the impurity positions and the orientation of the wave function. The investigation of the nanotadpole's energy spectra and their comparison with the cylindrical and spherical quantum dots suggest that the spectrum has degenerate states similar to the spherical case, however at some ranges, the levels behave similarly to the cylindrical case. The binding energy's dependence on the nanotadpole's size and the impurity position was obtained. The dependence of the diamagnetic susceptibility on the impurity position was calculated. An extensive investigation of the photoionization cross-section was carried out for the ground and the first two excited states as the initial states and the first twenty excited states as the final states.

摘要

最近,由于其无毒且具有较宽的直接带隙,人们对黄铜矿半导体纳米结构的兴趣与日俱增。同样,具有非平凡几何形状的结构因其电子、光学和磁性特性而特别引人关注。在当前这篇文章中,有限元方法与有效质量近似相结合,从理论上研究了在类氢浅偏心杂质存在的情况下黄铜矿AgInSe纳米蝌蚪的性质。纳米蝌蚪的形态赋予其优异的流体动力学特性,非常适合广泛的应用。获得了各种杂质位置和能级的概率密度。结果表明,电子行为强烈依赖于杂质位置和波函数的取向。对纳米蝌蚪的能谱进行研究并与圆柱形和球形量子点进行比较表明,该能谱具有与球形情况类似的简并态,然而在某些范围内,能级的行为与圆柱形情况相似。得出了结合能对纳米蝌蚪尺寸和杂质位置的依赖性。计算了抗磁磁化率对杂质位置的依赖性。对基态和前两个激发态作为初始态以及前二十个激发态作为终态的光电离截面进行了广泛研究。

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