Beynon Edward L, Barker Oliver J, Veal Tim D, O'Brien Liam, O'Sullivan Marita
Department of Physics, University of Liverpool, Oxford Street, Liverpool, L69 7ZE, UK.
Sci Rep. 2024 Dec 28;14(1):30887. doi: 10.1038/s41598-024-81679-2.
Topological semimetals have recently garnered widespread interest in the quantum materials research community due to their symmetry-protected surface states with dissipationless transport which have potential applications in next-generation low-power electronic devices. One such material, [Formula: see text], exhibits Dirac nodal arcs and although the topological properties of single crystals have been investigated, there have been no reports in crystalline thin film geometry. We examined the growth of [Formula: see text] heterostructures on a range of single crystals by optimizing the electron beam evaporation of Pt and Sn and studied the effect of vacuum thermal annealing on phase and crystallinity. The electrical resistivity was fitted to a modified Bloch-Grüneisen model with a residual resistivity of 79.43(1) [Formula: see text]cm at 2K and a Debye temperature of 200K. Nonlinear Hall resistance indicated the presence of more than one carrier type with an effective carrier mobility of 33.6 [Formula: see text] and concentration of 1.41 [Formula: see text] at 300 K. X-ray photoemission spectra were in close agreement with convolved density of states and a work function of 4.7(2) eV was determined for the [Formula: see text] (010) surface. This study will facilitate measurements that require heterostructure geometry, such as spin and topological Hall effect, and will facilitate potential device incorporation in future quantum technologies.
拓扑半金属最近在量子材料研究领域引起了广泛关注，因为它们具有受对称性保护的表面态，具备无耗散输运特性，这在下一代低功耗电子器件中具有潜在应用价值。一种这样的材料，[化学式：见正文]，呈现出狄拉克节线弧，尽管已经对其单晶的拓扑性质进行了研究，但尚未有关于晶体薄膜几何结构的报道。我们通过优化铂和锡的电子束蒸发工艺，研究了[化学式：见正文]异质结构在一系列单晶上的生长情况，并研究了真空热退火对相和结晶度的影响。在2K温度下，将电阻率拟合到修正的布洛赫 - 格林艾森模型，残余电阻率为79.43(1)[公式：见正文]cm，德拜温度为200K。非线性霍尔电阻表明存在不止一种载流子类型，在300K时有效载流子迁移率为33.6[公式：见正文]，浓度为1.41[公式：见正文]。X射线光电子能谱与卷积态密度密切吻合，确定化学式：见正文表面的功函数为4.�(2)eV。这项研究将有助于进行需要异质结构几何结构的测量，如自旋和拓扑霍尔效应，并将有助于未来量子技术中潜在器件的集成。
