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MnGeBiTe中的相变、狄拉克和外尔半金属态

Phase transitions, Dirac and Weyl semimetal states in MnGeBiTe.

作者信息

Shikin A M, Zaitsev N L, Estyunina T P, Estyunin D A, Rybkin A G, Glazkova D A, Klimovskikh I I, Eryzhenkov A V, Kokh K A, Golyashov V A, Tereshchenko O E, Ideta S, Miyai Y, Kumar Y, Iwata T, Kosa T, Kuroda K, Shimada K, Tarasov A V

机构信息

Saint Petersburg State University, St. Petersburg, 198504, Russia.

Institute of Molecule and Crystal Physics, Subdivision of the Ufa Federal Research Centre of the Russian Academy of Sciences, Ufa, 450075, Russia.

出版信息

Sci Rep. 2025 Jan 11;15(1):1741. doi: 10.1038/s41598-024-73267-1.

Abstract

Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), an experimental and theoretical study of changes in the electronic structure (dispersion dependencies) and corresponding modification of the energy band gap at the Dirac point (DP) for topological insulator (TI) [Formula: see text] have been carried out with gradual replacement of magnetic Mn atoms by non-magnetic Ge atoms when concentration of the latter was varied from 10% to 75%. It was shown that when Ge concentration increases, the bulk band gap decreases and reaches zero plateau in the concentration range of 45-60% while trivial surface states (TrSS) are present and exhibit an energy splitting of 100 and 70 meV in different types of measurements. It was also shown that TSS disappear from the measured band dispersions at a Ge concentration of about 40%. DFT calculations of [Formula: see text] band structure were carried out to identify the nature of observed band dispersion features and to analyze the possibility of magnetic Weyl semimetal state formation in this system. These calculations were performed for both antiferromagnetic (AFM) and ferromagnetic (FM) ordering types while the spin-orbit coupling (SOC) strength was varied or a strain (compression or tension) along the c-axis was applied. Calculations show that two different series of topological phase transitions (TPTs) may be implemented in this system, depending on the magnetic ordering. In the case of AFM ordering, the transition between TI and the trivial insulator phase passes through the Dirac semimetal state, whereas for FM phase such route admits three intermediate states instead of one (TI-Dirac semimetal-Weyl semimetal-Dirac semimetal-trivial insulator). Weyl points that form in the FM system along the [Formula: see text] direction annihilate when either the SOC strength decreases or a sufficient tensile strain is applied, which is accompanied by the corresponding TPTs. Model calculations of the influence of local magnetic ordering in AFM [Formula: see text] were carried out by alternating Mn layers with Ge-doped layers and showed that the magnetic Weyl semimetal state in this system is reachable at a Ge concentration of approximately 40% without application of any external magnetic fields.

摘要

利用角分辨光电子能谱(ARPES)和密度泛函理论(DFT),当非磁性Ge原子浓度从10%变化到75%逐渐取代磁性Mn原子时,对拓扑绝缘体(TI)[化学式:见正文]的电子结构变化(色散依赖性)以及狄拉克点(DP)处能带隙的相应改变进行了实验和理论研究。结果表明,当Ge浓度增加时,体能带隙减小,并在45 - 60%的浓度范围内达到零平台期,此时存在平凡表面态(TrSS),且在不同类型测量中表现出100和70 meV的能量分裂。还表明,在Ge浓度约为40%时,TSS从测量的能带色散中消失。对[化学式:见正文]能带结构进行DFT计算,以确定观察到的能带色散特征的性质,并分析该系统中形成磁性外尔半金属态的可能性。这些计算针对反铁磁(AFM)和铁磁(FM)有序类型进行,同时改变自旋轨道耦合(SOC)强度或沿c轴施加应变(压缩或拉伸)。计算表明,根据磁有序情况,该系统可能实现两种不同系列的拓扑相变(TPT)。在AFM有序情况下,TI与平凡绝缘体相之间的转变通过狄拉克半金属态,而对于FM相,该路径允许三个中间态而非一个(TI - 狄拉克半金属 - 外尔半金属 - 狄拉克半金属 - 平凡绝缘体)。当SOC强度降低或施加足够的拉伸应变时,FM系统中沿[化学式:见正文]方向形成的外尔点会湮灭,这伴随着相应的TPT。通过交替Mn层和Ge掺杂层对AFM[化学式:见正文]中局部磁有序的影响进行了模型计算,结果表明,在不施加任何外部磁场的情况下,该系统在Ge浓度约为40%时可达到磁性外尔半金属态。

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