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离子-光学阻抗谱(I-OIS):一种用于混合离子电子导体原位电化学表征的无模型技术。

Iono-Optic Impedance Spectroscopy (I-OIS): A Model-Less Technique for In Situ Electrochemical Characterization of Mixed Ionic Electronic Conductors.

作者信息

Nizet Paul, Chiabrera Francesco, Tang Yunqing, Alayo Nerea, Laurenti Beatrice, Baiutti Federico, Morata Alex, Tarancón Albert

机构信息

Department of Advanced Materials for Energy Applications, Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, Sant Adrià del Besòs, Barcelona, 08930, Spain.

College of Aerospace and Civil Engineering, Harbin Engineering University, Nantong Street 145, Harbin, 150001, P. R. China.

出版信息

Small Methods. 2025 Apr;9(4):e2402043. doi: 10.1002/smtd.202402043. Epub 2024 Dec 30.

Abstract

Functional properties of mixed ionic electronic conductors (MIECs) can be radically modified by (de)insertion of mobile charged defects. A complete control of this dynamic behavior has multiple applications in a myriad of fields including advanced computing, data processing, sensing or energy conversion. However, the effect of different MIEC's state-of-charge is not fully understood yet and there is a lack of strategies for fully controlling the defect content in a material. In this work we present a model-less technique to characterize ionic defect concentration and ionic insertion kinetics in MIEC materials: Iono-Optic Impedance Spectroscopy (I-OIS). The proof of concept and advantages of I-OIS are demonstrated by studying the oxygen (de)insertion in thin films of hole-doped perovskite oxides. Ion migration into/out of the studied materials is achieved by the application of an electrochemical potential, achieving stable and reversible modification of its optical properties. By tracking the dynamic variation of optical properties depending on the gating conditions, I-OIS enables to extract electrochemical parameters involved in the electrochromic process. The results demonstrate the capability of the technique to effectively characterize the kinetics of single- and even multi-layer systems. The technique can be employed for studying underlying mechanisms of the response characteristics of MIEC-based devices.

摘要

混合离子电子导体(MIECs)的功能特性可通过移动带电缺陷的(去)插入而发生根本性改变。对这种动态行为的完全控制在包括先进计算、数据处理、传感或能量转换在内的众多领域都有多种应用。然而,不同MIEC充电状态的影响尚未得到充分理解,并且缺乏完全控制材料中缺陷含量的策略。在这项工作中,我们提出了一种无模型技术来表征MIEC材料中的离子缺陷浓度和离子插入动力学:离子光学阻抗谱(I-OIS)。通过研究空穴掺杂钙钛矿氧化物薄膜中的氧(去)插入,证明了I-OIS的概念验证和优势。通过施加电化学势实现离子在研究材料中的迁入/迁出,从而实现其光学性质的稳定且可逆的改变。通过跟踪取决于门控条件的光学性质的动态变化,I-OIS能够提取电致变色过程中涉及的电化学参数。结果证明了该技术有效表征单层甚至多层系统动力学的能力。该技术可用于研究基于MIEC的器件响应特性的潜在机制。

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