Ghiasabadi Farahani Mehrdad, Quintana Alberto, Song Tingfeng, Kumar Rohit, Rubano Andrea, Ali Faizan, Sánchez Florencio, Fina Ignasi
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Spain.
Dipartimento di Fisica "E. Pancini", Università Federico II, Monte S. Angelo, Via Cinthia, Napoli 80126, Italy.
ACS Appl Mater Interfaces. 2025 Jan 15;17(2):3570-3577. doi: 10.1021/acsami.4c15867. Epub 2025 Jan 1.
Nanolaminates based on ferroelectric polycrystalline doped HfO have gained interest because those compounds show enhanced functional properties. Here, we achieve coexisting improvement of remanent polarization and dielectric permittivity in wake-up-free epitaxial HfZrO/HfO nanolaminates with different numbers of HfO nanolayers if compared with HfZrO single films of equivalent thickness or other reported polycrystalline nanolaminates. Comprehensive structural characterization reveals that the origin of the enhancement must be the larger amount of the orthorhombic phase in the nanolaminates. The retention of nanolaminates is greater than that of HfZrO single films; however, fatigue is larger and ferroelectric switching is slower in the nanolaminates compared with single layers. The present work reveals nanolamination in high-quality films as a strategy to increase dielectric permittivity without important degradation of other functional properties.
基于铁电多晶掺杂HfO的纳米叠层受到了关注，因为这些化合物表现出增强的功能特性。在这里，与同等厚度的HfZrO单晶膜或其他报道的多晶纳米叠层相比，我们在具有不同数量HfO纳米层的无唤醒外延HfZrO/HfO纳米叠层中实现了剩余极化和介电常数的共存改善。全面的结构表征表明，增强的根源一定是纳米叠层中正交相的含量更高。纳米叠层的保持率大于HfZrO单晶膜；然而，与单层相比，纳米叠层的疲劳更大，铁电开关更慢。目前的工作揭示了高质量薄膜中的纳米叠层是一种在不严重降低其他功能特性的情况下提高介电常数的策略。
