Zhang Haina, Wei Ying, Liu Xiao, Chen Zhongning, Wei Zhenhong, Cai Hu
School of Chemistry and Chemical Engineering, Nanchang University, Nanchang 330031, P. R. China.
Inorg Chem. 2025 Jan 20;64(2):845-854. doi: 10.1021/acs.inorgchem.4c03814. Epub 2025 Jan 3.
Organic-inorganic hybrid lead halides have been extensively studied due to their outstanding physical properties and diverse compositional elements. However, environmentally benign tin-based hybrids with remarkable flexibility in bandgap engineering have been less investigated. Herein, we report the successful design and synthesis of three tin-based organic-inorganic hybrid compounds through precise molecular modification: [Me(i-Pr)N][SnBr] (), [MeCHCl(i-Pr)N][SnBr] (), and [MeCHBr(i-Pr-Br)N][SnBr] (). Building on the prototype compound , the introduction of heavier halogen atoms in (Cl) and (Br) increased the potential energy barrier required for cationic flipping, thereby achieving a rise in the phase transition temperature from 335 K () to 355 K () and 375 K (), which also perfectly coincides with the switchable dielectric anomalies and second harmonic generation (SHG) properties. Based on the two-dimensional fingerprint analysis of the Hirshfeld surface, with the introduction of halogens, the intermolecular interactions, including not only C-H···Br-Sn but also C-X···Br-Sn (X = Cl, Br) halogen···halogen interaction, lead to the higher phase transition temperatures in and . Furthermore, UV-NIR-vis absorption spectra revealed that the optical bandgap varies with the substitution from H to Cl to Br, yet all belong to direct bandgap semiconductors. Based on the aforementioned properties, this work provides an effective molecular design strategy for exploring and constructing tin switchable materials with temperature-adjustable characteristics.
有机-无机杂化卤化铅因其出色的物理性质和多样的组成元素而受到广泛研究。然而,在带隙工程方面具有显著灵活性的环境友好型锡基杂化物的研究较少。在此,我们报告通过精确的分子修饰成功设计并合成了三种锡基有机-无机杂化化合物:[Me(i-Pr)N][SnBr]()、[MeCHCl(i-Pr)N][SnBr]()和[MeCHBr(i-Pr-Br)N][SnBr]()。基于原型化合物,在(Cl)和(Br)中引入较重的卤素原子增加了阳离子翻转所需的势能垒,从而使相变温度从335 K()升高到355 K()和375 K(),这也与可切换的介电异常和二次谐波产生(SHG)特性完美吻合。基于Hirshfeld表面的二维指纹分析,随着卤素的引入,分子间相互作用不仅包括C-H···Br-Sn,还包括C-X···Br-Sn(X = Cl,Br)卤素···卤素相互作用,导致和中具有更高的相变温度。此外,紫外-近红外-可见吸收光谱表明,光学带隙随从H到Cl再到Br的取代而变化,但均属于直接带隙半导体。基于上述性质,这项工作为探索和构建具有温度可调特性的锡基可切换材料提供了一种有效的分子设计策略。