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拓扑绝缘体BiSb中具有高优值的磁热电器件。

A magneto-thermoelectric with a high figure of merit in topological insulator BiSb.

作者信息

Pan Yu, He Bin, Feng Xiaolong, Li Fan, Chen Dong, Burkhardt Ulrich, Felser Claudia

机构信息

Max Planck Institute for Chemical Physics of Solids, Dresden, Germany.

College of Materials Science and Engineering and Center of Quantum Materials & Devices, Chongqing University, Chongqing, People's Republic of China.

出版信息

Nat Mater. 2025 Jan;24(1):76-82. doi: 10.1038/s41563-024-02059-9. Epub 2025 Jan 3.

Abstract

High thermoelectric performance is generally achieved by synergistically optimizing two or even three of the contradictorily coupled thermoelectric parameters. Here we demonstrate magneto-thermoelectric correlation as a strategy to achieve simultaneous gain in an enhanced Seebeck coefficient and reduced thermal conductivity in topological materials. We report a large magneto-Seebeck effect and high magneto-thermoelectric figure of merit of 1.7 ± 0.2 at 180 K and 0.7 T in a single-crystalline BiSb topological insulator. This result fills a gap of a high performance below 300 K and is promising for low-temperature thermoelectric applications. The large magneto-Seebeck response is attributed to the ultrahigh mobility and the Dirac band dispersion. The application of a low magnetic field to achieve a high thermoelectric performance can be extended to topological materials with similar features that are rapidly emerging because it synergistically optimizes the thermoelectric parameters.

摘要

通常通过协同优化两个甚至三个相互矛盾耦合的热电参数来实现高热电性能。在此,我们展示了磁热电相关性,作为一种在拓扑材料中同时提高塞贝克系数和降低热导率的策略。我们报道了在单晶BiSb拓扑绝缘体中,在180 K和0.7 T时具有大的磁塞贝克效应和1.7±0.2的高磁热电优值。这一结果填补了300 K以下高性能的空白,并有望用于低温热电应用。大的磁塞贝克响应归因于超高迁移率和狄拉克带色散。通过施加低磁场来实现高热电性能的应用可以扩展到具有类似特性的快速涌现的拓扑材料,因为它能协同优化热电参数。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a866/11698688/24fd97153b43/41563_2024_2059_Fig1_HTML.jpg

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