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用于在机械化学合成的半导体硫锡铜矿CuZnSnS纳米粉末中尽量减少外来氧含量的合成策略。

Synthesis Strategy Toward Minimizing Adventitious Oxygen Contents in the Mechanochemically Made Semiconductor Kesterite CuZnSnS Nanopowders.

作者信息

Kapusta Katarzyna, Olejniczak Zbigniew, Janik Jerzy F

机构信息

Faculty of Energy and Fuels, AGH University, al. Mickiewicza 30, 30 059 Kraków, Poland.

Institute of Nuclear Physics, Polish Academy of Sciences, ul. Radzikowskiego 152, 31 342 Krakow, Poland.

出版信息

Materials (Basel). 2024 Dec 13;17(24):6091. doi: 10.3390/ma17246091.

Abstract

A multipronged approach to the refined mechanochemical synthesis of the semiconductor kesterite CuZnSnS with minimal quantities of adventitious oxygen as well as to optimizing handling procedures from that angle is described. Three precursor systems are used to provide a pool of freshly made cubic prekesterite nanopowders with no semiconductor properties and the thermally annealed at 500 °C tetragonal kesterite nanopowders of the semiconductor. Based on the previously reported high propensity of such nanopowders to long-term deteriorating oxidation in ambient air, suitable modifications of all crucial synthesis steps are implemented, which are directed toward excluding or limiting the materials' exposure to air. The nanopowders are comprehensively characterized by powder XRD, FT-IR/Raman/UV-Vis spectroscopies, solid-state Cu/Sn MAS NMR, TGA/DTA-QMS analysis, SEM, BET/BJH specific surface area, and helium density determinations, and, significantly, are directly analyzed for oxygen and hydrogen contents. The important finding is that following the anaerobic procedures and realistically minimizing the materials' exposure to air in certain manipulation steps results in the preparation of better oxidation-resistant nanopowders with a dramatic relative decrease in their oxygen content than previously reported. The adherence to the strict synthesis conditions that limit contact of the no-oxygen-containing kesterite nanopowders with ambient air is emphasized.

摘要

本文描述了一种多管齐下的方法,用于以最少的外来氧对半导体硫锡铜矿CuZnSnS进行精细的机械化学合成,并从该角度优化处理程序。使用了三种前驱体系统来提供一批新制备的无半导体性质的立方前驱硫锡铜矿纳米粉末,以及在500℃下热退火的半导体四方硫锡铜矿纳米粉末。基于此前报道的此类纳米粉末在环境空气中易于长期发生氧化变质的特性,对所有关键合成步骤进行了适当修改,旨在排除或限制材料与空气的接触。通过粉末XRD、FT-IR/Raman/UV-Vis光谱、固态Cu/Sn MAS NMR、TGA/DTA-QMS分析、SEM、BET/BJH比表面积和氦密度测定等方法对纳米粉末进行了全面表征,并且重要的是,直接分析了其氧和氢含量。重要发现是,遵循厌氧程序并在某些操作步骤中切实减少材料与空气的接触,能够制备出抗氧化性更好的纳米粉末,其氧含量相对于之前报道有显著降低。强调了要严格遵守限制无氧硫锡铜矿纳米粉末与环境空气接触的合成条件。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a54/11676708/97e612acc357/materials-17-06091-g001.jpg

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