Laterally Excited Resonators Based on Single-Crystalline LiTaO Thin Film for High-Frequency Applications.

High-performance acoustic resonators based on single-crystalline piezoelectric thin films have great potential in wireless communication applications. This paper presents the modeling, fabrication, and characterization of laterally excited bulk resonators (XBARs) utilizing the suspended ultra-thin (420 nm) LiTaO (LT, with 42° YX-cut) film. The finite element analysis (FEA) was performed to model the LT-based XBARs precisely and to gain further insight into the physical behaviors of the acoustic waves and the loss mechanisms. In addition, the temperature response of the devices was numerically calculated, showing relatively low temperature coefficients of frequency () of ~-38 ppm/K for the primary resonant mode. The LT-based XBARs were fabricated and characterized, which presents a multi-resonant mode over a wide frequency range (0.110 GHz). For the primary resonance around 4.1 GHz, the fabricated devices exhibited a high-quality factor (Bode-Q) ~ 600 and piezoelectric coupling () ~ 2.84%, while the higher-harmonic showed a greater value of ~ 3.49%. To lower the resonant frequency of the resonator, the thin SiO film (~20 nm) was sputtered on the suspended device, which created a frequency offset between the series and shunt resonators. Finally, a ladder-type narrow band filter employing five XBARs was developed and characterized. This work effectively demonstrates the performance and application potential of micro-acoustic resonators employing high-quality LT films.