Hofmann Niklas, Steinhoff Alexander, Krause Razvan, Mishra Neeraj, Orlandini Giorgio, Forti Stiven, Coletti Camilla, Wehling Tim O, Gierz Isabella
Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany.
Institute for Theoretical Physics, Universität Bremen, P.O. Box 330 440, 28334 Bremen, Germany.
Nano Lett. 2025 Jan 22;25(3):1214-1219. doi: 10.1021/acs.nanolett.4c06238. Epub 2025 Jan 8.
Understanding and controlling the electronic properties of two-dimensional materials are crucial for their potential applications in nano- and optoelectronics. Monolayer transition metal dichalcogenides have garnered significant interest due to their strong light-matter interaction and extreme sensitivity of the band structure to the presence of photogenerated electron-hole pairs. In this study, we investigate the transient electronic structure of monolayer WS on a graphene substrate after resonant excitation of the A-exciton using time- and angle-resolved photoemission spectroscopy. We observe a pronounced band structure renormalization, including a substantial reduction of the transient band gap in good quantitative agreement with our theory, revealing the importance of both intrinsic WS and extrinsic substrate contributions. Our findings deepen the fundamental understanding of band structure dynamics in two-dimensional materials and offer valuable insights for the development of novel electronic and optoelectronic devices based on monolayer TMDs and their heterostructures with graphene.
理解和控制二维材料的电子特性对于它们在纳米和光电子学中的潜在应用至关重要。单层过渡金属二硫属化物因其强烈的光与物质相互作用以及能带结构对光生电子 - 空穴对存在的极端敏感性而引起了广泛关注。在本研究中,我们使用时间分辨和角分辨光电子能谱,在A激子共振激发后,研究了石墨烯衬底上单层WS的瞬态电子结构。我们观察到明显的能带结构重整化,包括瞬态带隙的大幅减小,这与我们的理论在定量上有很好的一致性,揭示了本征WS和非本征衬底贡献的重要性。我们的发现加深了对二维材料能带结构动力学的基本理解,并为基于单层过渡金属二硫属化物及其与石墨烯异质结构的新型电子和光电器件的开发提供了有价值的见解。