Aalbers Guus J W, Remmerswaal Willemijn H M, van den Heuvel Ralph H C, Bellini Laura, Kessels Lana M, Weijtens Christ H L, Schipper Nick R M, Wienk Martijn M, Janssen René A J
Molecular Materials and Nanosystems & Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.
Dutch Institute for Fundamental Energy Research, De Zaale 20, 5612 AJ Eindhoven, The Netherlands.
J Phys Chem Lett. 2025 Jan 9;16(1):372-377. doi: 10.1021/acs.jpclett.4c03307. Epub 2024 Dec 30.
Reducing nonradiative recombination is crucial for minimizing voltage losses in metal-halide perovskite solar cells and achieving high power conversion efficiencies. Photoluminescence spectroscopy on complete or partial perovskite solar cell stacks is often used to quantify and disentangle bulk and interface contributions to nonradiative losses. Accurately determining the intrinsic loss in a perovskite layer is key to analyzing the origins of nonradiative recombination and developing defect engineering strategies. Here, we study perovskite films on glass and indium-tin-oxide-covered glass substrates, functionalized with a range of different molecules, using absolute and transient photoluminescence. We find that grafting these substrates with 1,6-hexylenediphosphonic acid (HDPA) effectively reduces the nonradiative losses in perovskite films for a series of perovskite semiconductors with bandgaps ranging from 1.26 to 2.28 eV. The results suggest that perovskites processed on HDPA-functionalized substrates suffer the least from nonradiative recombination and thus approach the properties of a defect-free semiconductor.
减少非辐射复合对于最小化金属卤化物钙钛矿太阳能电池中的电压损失并实现高功率转换效率至关重要。完整或部分钙钛矿太阳能电池堆栈的光致发光光谱通常用于量化和区分体相和界面非辐射损失的贡献。准确确定钙钛矿层中的本征损失是分析非辐射复合起源和制定缺陷工程策略的关键。在这里，我们使用绝对光致发光和瞬态光致发光研究了在玻璃和氧化铟锡覆盖的玻璃基板上用一系列不同分子功能化的钙钛矿薄膜。我们发现，用1,6-己二磷酸（HDPA）接枝这些基板可有效降低一系列带隙范围为1.26至2.28 eV的钙钛矿半导体的钙钛矿薄膜中的非辐射损失。结果表明，在HDPA功能化基板上加工的钙钛矿受非辐射复合的影响最小，因此接近无缺陷半导体的特性。
