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卤化物钙钛矿在纳米晶体、单晶和薄膜中的结晶过程及方法

Halide Perovskite Crystallization Processes and Methods in Nanocrystals, Single Crystals, and Thin Films.

作者信息

Gao Qiaojiao, Qi Jianhang, Chen Kai, Xia Minghao, Hu Yue, Mei Anyi, Han Hongwei

机构信息

Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China.

出版信息

Adv Mater. 2022 Dec;34(52):e2200720. doi: 10.1002/adma.202200720. Epub 2022 Jul 30.

DOI:10.1002/adma.202200720
PMID:35385587
Abstract

Halide perovskite semiconductors with extraordinary optoelectronic properties have been fascinatedly studied. Halide perovskite nanocrystals, single crystals, and thin films have been prepared for various fields, such as light emission, light detection, and light harvesting. High-performance devices rely on high crystal quality determined by the nucleation and crystal growth process. Here, the fundamental understanding of the crystallization process driven by supersaturation of the solution is discussed and the methods for halide perovskite crystals are summarized. Supersaturation determines the proportion and the average Gibbs free energy changes for surface and volume molecular units involved in the spontaneous aggregation, which could be stable in the solution and induce homogeneous nucleation only when the solution exceeds a required minimum critical concentration (C ). Crystal growth and heterogeneous nucleation are thermodynamically easier than homogeneous nucleation due to the existent surfaces. Nanocrystals are mainly prepared via the nucleation-dominated process by rapidly increasing the concentration over C , single crystals are mainly prepared via the growth-dominated process by keeping the concentration between solubility and C , while thin films are mainly prepared by compromising the nucleation and growth processes to ensure compactness and grain sizes. Typical strategies for preparing these three forms of halide perovskites are also reviewed.

摘要

具有非凡光电特性的卤化物钙钛矿半导体受到了广泛的研究。卤化物钙钛矿纳米晶体、单晶和薄膜已被制备用于各种领域,如发光、光探测和光捕获。高性能器件依赖于由成核和晶体生长过程决定的高晶体质量。在此,讨论了由溶液过饱和度驱动的结晶过程的基本理解,并总结了卤化物钙钛矿晶体的制备方法。过饱和度决定了参与自发聚集的表面和体积分子单元的比例以及平均吉布斯自由能变化,只有当溶液超过所需的最小临界浓度(C)时,这些分子单元才能在溶液中稳定并诱导均匀成核。由于存在表面,晶体生长和异质成核在热力学上比均匀成核更容易。纳米晶体主要通过在C以上快速增加浓度的成核主导过程制备,单晶主要通过将浓度保持在溶解度和C之间的生长主导过程制备,而薄膜主要通过平衡成核和生长过程来确保致密性和晶粒尺寸。还综述了制备这三种形式卤化物钙钛矿的典型策略。

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