Ni Kaipeng, Zhou Jiayuan, Chen Yang, Cheng Huanghuang, Cao Ziyi, Guo Junming, Söll Aljoscha, Hou Xingyuan, Shan Lei, Sofer Zdenek, Yang Mengmeng, Yue Yang, Xu Jinsong, Tian Mingliang, Gao Wenshuai, Jiang Yuxuan, Fang Yong, Liu Xue
Center of Free Electron Laser & High Magnetic Field, Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China.
Jiangsu Laboratory of Advanced Functional Materials, School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, China.
ACS Nano. 2025 Jan 21;19(2):2624-2632. doi: 10.1021/acsnano.4c14452. Epub 2025 Jan 9.
Recently, two-dimensional (2D) van der Waals (vdW) magnetic materials have emerged as a promising platform for studying exchange bias (EB) phenomena due to their atomically flat surfaces and highly versatile stacking configurations. Although complex spin configurations between 2D vdW interfaces introduce challenges in understanding their underlying mechanisms, they can offer more possibilities in realizing effective manipulations. In this study, we present a spin-orthogonal arranged 2D FeGaTe (FGaT)/CrSBr vdW heterostructure, realizing the EB effect with the bias field as large as 1730 Oe at 2 K. Interestingly, this structure induces a positive EB under low cooling field, in contrast to conventional phenomena. Moreover, by employing asymmetric field sweeping methods, we effectively manipulate the zero-field cooling EB of the device with a switchable sign and a tunable magnitude. Thus, these findings not only elucidate a distinct mechanism analysis for EB phenomena with perpendicular coupled spin configurations but also hold promise for promoting contemporary 2D spintronic device applications.
最近，二维（2D）范德华（vdW）磁性材料因其原子级平整的表面和高度多样的堆叠结构，已成为研究交换偏置（EB）现象的一个有前景的平台。尽管二维vdW界面之间复杂的自旋构型给理解其潜在机制带来了挑战，但它们在实现有效操控方面可以提供更多可能性。在本研究中，我们展示了一种自旋正交排列的二维FeGaTe（FGaT）/CrSBr vdW异质结构，在2 K时实现了高达1730 Oe的偏置场下的EB效应。有趣的是，与传统现象相反，这种结构在低冷却场下诱导出正的EB。此外，通过采用非对称场扫描方法，我们有效地操控了该器件的零场冷却EB，其符号可切换且大小可调。因此，这些发现不仅阐明了具有垂直耦合自旋构型的EB现象的独特机制分析，而且有望推动当代二维自旋电子器件的应用。
