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选择性生长的基于拓扑绝缘体的三端结中的超导耦合效应。

Superconductive Coupling Effects in Selectively Grown Topological Insulator-Based Three-Terminal Junctions.

作者信息

Behner Gerrit, Jalil Abdur Rehman, Rupp Alina, Lüth Hans, Grützmacher Detlev, Schäpers Thomas

机构信息

Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany.

JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich and RWTH Aachen University, 52425 Jülich, Germany.

出版信息

ACS Nano. 2025 Jan 28;19(3):3878-3885. doi: 10.1021/acsnano.4c15893. Epub 2025 Jan 13.

DOI:10.1021/acsnano.4c15893
PMID:39806296
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11781021/
Abstract

The combination of an ordinary s-type superconductor with three-dimensional topological insulators creates a promising platform for fault-tolerant topological quantum computing circuits based on Majorana braiding. The backbone of the braiding mechanism are three-terminal Josephson junctions. It is crucial to understand the transport in these devices for further use in quantum computing applications. We present low-temperature measurements of topological insulator-based three-terminal Josephson junctions fabricated by a combination of selective-area growth of BiSbTe and shadow mask evaporation of Nb. This approach allows for the in situ fabrication of Josephson junctions with an exceptional interface quality, important for the study of the proximity-effect. We map out the transport properties of the device as a function of bias currents and prove the coupling of the junctions by the observation of a multiterminal geometry-induced diode effect. We find good agreement of our findings with a resistively and capacitively shunted junction network model.

摘要

普通s型超导体与三维拓扑绝缘体相结合,为基于马约拉纳编织的容错拓扑量子计算电路创造了一个很有前景的平台。编织机制的核心是三端约瑟夫森结。了解这些器件中的输运情况对于量子计算应用的进一步发展至关重要。我们展示了通过BiSbTe的选择性区域生长和Nb的阴影掩膜蒸发相结合制造的基于拓扑绝缘体的三端约瑟夫森结的低温测量结果。这种方法允许原位制造具有卓越界面质量的约瑟夫森结,这对于研究近邻效应很重要。我们绘制了器件的输运特性随偏置电流的变化关系,并通过观察多端几何结构诱导的二极管效应证明了结的耦合。我们发现我们的结果与电阻和电容并联结网络模型有很好的一致性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9857/11781021/1ec6156a84b6/nn4c15893_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9857/11781021/19926b11c8ef/nn4c15893_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9857/11781021/4fb7ccbfa110/nn4c15893_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9857/11781021/0d142d682c8c/nn4c15893_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9857/11781021/294c2fde7e8f/nn4c15893_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9857/11781021/1ec6156a84b6/nn4c15893_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9857/11781021/19926b11c8ef/nn4c15893_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9857/11781021/4fb7ccbfa110/nn4c15893_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9857/11781021/0d142d682c8c/nn4c15893_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9857/11781021/294c2fde7e8f/nn4c15893_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9857/11781021/1ec6156a84b6/nn4c15893_0005.jpg

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本文引用的文献

1
Flux-Tunable Josephson Diode Effect in a Hybrid Four-Terminal Josephson Junction.混合四端约瑟夫森结中的通量可调约瑟夫森二极管效应
ACS Nano. 2024 Mar 26;18(12):9221-9231. doi: 10.1021/acsnano.4c01642. Epub 2024 Mar 15.
2
Phase-engineering the Andreev band structure of a three-terminal Josephson junction.对三端约瑟夫森结的安德列夫能带结构进行相位工程。
Nat Commun. 2023 Oct 25;14(1):6784. doi: 10.1038/s41467-023-42356-6.
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Tunable Josephson Diode Effect on the Surface of Topological Insulators.拓扑绝缘体表面的可调谐约瑟夫森二极管效应。
Phys Rev Lett. 2023 Sep 1;131(9):096001. doi: 10.1103/PhysRevLett.131.096001.
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Sign reversal of the Josephson inductance magnetochiral anisotropy and 0-π-like transitions in supercurrent diodes.约瑟夫森电感磁手性各向异性的符号反转以及超电流二极管中的0-π类转变。
Nat Nanotechnol. 2023 Nov;18(11):1266-1272. doi: 10.1038/s41565-023-01451-x. Epub 2023 Jul 10.
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Gate-tunable superconducting diode effect in a three-terminal Josephson device.三端约瑟夫森器件中的栅极可调超导二极管效应。
Nat Commun. 2023 May 29;14(1):3078. doi: 10.1038/s41467-023-38856-0.
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Robust and Fragile Majorana Bound States in Proximitized Topological Insulator Nanoribbons.近邻拓扑绝缘体纳米带中的稳健与脆弱马约拉纳束缚态
Nanomaterials (Basel). 2023 Feb 14;13(4):723. doi: 10.3390/nano13040723.
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Selective Area Epitaxy of Quasi-1-Dimensional Topological Nanostructures and Networks.准一维拓扑纳米结构与网络的选择性区域外延
Nanomaterials (Basel). 2023 Jan 15;13(2):354. doi: 10.3390/nano13020354.
8
Supercurrent in BiTe Topological Material-Based Three-Terminal Junctions.基于BiTe拓扑材料的三端结中的超电流。
Nanomaterials (Basel). 2023 Jan 10;13(2):293. doi: 10.3390/nano13020293.
9
Josephson Diode Effect in Supercurrent Interferometers.超导电流干涉仪中的约瑟夫森二极管效应。
Phys Rev Lett. 2022 Dec 23;129(26):267702. doi: 10.1103/PhysRevLett.129.267702.
10
Josephson Diode Effect in High-Mobility InSb Nanoflags.高迁移率锑化铟纳米旗中的约瑟夫森二极管效应。
Nano Lett. 2022 Nov 9;22(21):8502-8508. doi: 10.1021/acs.nanolett.2c02899. Epub 2022 Oct 26.