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一种基于远红外区域法诺\塔姆共振耦合的有前景的高灵敏度一维光子晶体磁场传感器。

A promising high-sensitive 1D photonic crystal magnetic field sensor based on the coupling of Fano\Tamm resonance in far IR region.

作者信息

Elsayed Hussein A, Medhat Mai, Hajjiah Ali, Alfassam Haifa E, Abukhadra Mostafa R, Mehaney Ahmed

机构信息

Department of Physics, College of Science, University of Ha'il, P.O. Box, 2440, Ha'il, Saudi Arabia.

Physics Department, Faculty of Science, Beni-Suef University, Beni-Suef, 62512, Egypt.

出版信息

Sci Rep. 2025 Jan 15;15(1):1977. doi: 10.1038/s41598-025-85747-z.

Abstract

This paper presents a novel investigation of a magnetic sensor that employs Fano/Tamm resonance within the photonic band gap of a one-dimensional crystal structure. The design incorporates a thin layer of gold (Au) alongside a periodic arrangement of Tantalum pentoxide ([Formula: see text]) and Cesium iodide ([Formula: see text]) in the configuration [Formula: see text]. We utilized the transfer matrix method in conjunction with the Drude model to analyze the formation of Fano/Tamm states and the permittivity of the metallic layer, respectively. These states can be manipulated based on the left-handed and right-handed circular polarization of electromagnetic waves, along with an applied magnetic field. Several key parameters were optimized, including material selection, layer thickness, unit cell periodicity, and the angle of incidence, to enhance the sensor performance. Additionally, we investigated how variations in magnetic field strength influence the position of Fano/Tamm resonance in the reflectivity spectrum of the interacting electromagnetic waves within a specific wavelength range of 60 μm to 140 μm. The proposed sensor displays good performance investigated by calculating several parameters like, sensitivity, figure of merit, quality factor and resolution. One of them, it shows a maximum sensitivity of 57 nm/Tesla within a magnetic field strength of 20 to 140 Tesla, positioning it as a promising candidate for various applications in magnetic field measurement and telecommunications, particularly in the unique far-infrared region.

摘要

本文介绍了一种新型磁传感器的研究,该传感器利用一维晶体结构光子带隙内的法诺/塔姆共振。该设计在结构[公式:见原文]中纳入了一层薄金(Au)以及五氧化二钽([公式:见原文])和碘化铯([公式:见原文])的周期性排列。我们分别利用转移矩阵法结合德鲁德模型来分析法诺/塔姆态的形成和金属层的介电常数。这些态可以基于电磁波的左旋和右旋圆极化以及外加磁场进行调控。优化了几个关键参数,包括材料选择、层厚度、晶胞周期性和入射角,以提高传感器性能。此外,我们研究了磁场强度的变化如何影响在60μm至140μm特定波长范围内相互作用电磁波反射率谱中法诺/塔姆共振的位置。通过计算灵敏度、品质因数、品质因子和分辨率等几个参数,所提出的传感器显示出良好的性能。其中之一,它在20至140特斯拉的磁场强度范围内显示出57nm/特斯拉的最大灵敏度,使其成为磁场测量和电信领域各种应用的有前途的候选者,特别是在独特的远红外区域。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/989f/11732997/96a53ea508ce/41598_2025_85747_Fig1_HTML.jpg

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