Parveen Sumaiya, Pal Pratap Kumar, Mukhopadhyay Suchetana, Majumder Sudipta, Bisoi Swapneswar, Rahman Atikur, Barman Anjan
Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata-700106, India.
Department of Physics, Indian Institute of Science Education and Research, Dr Homi Bhaba Road, Pune 411008, India.
Nanoscale. 2025 Jan 29;17(5):2800-2809. doi: 10.1039/d4nr03866e.
Herein, we investigated the carrier-phonon relaxation process in a two-dimensional (2D) BAPbBr perovskite and its heterostructure with MoS. Energy transfer was observed in the van der Waals heterostructure of 2D perovskite and monolayer MoS, leading to enhancement in the photoluminescence intensity of MoS. Femtosecond pump-probe spectroscopy was used to study the carrier and lattice dynamics of pristine 2D materials and their heterostructure. A generalized two-temperature model was introduced to include competing effects of electron cooling in the rate equation of electron and lattice relaxation dynamics. The hot phonon bottleneck effect is more enhanced in the BAPbBr/MoS heterostructure than in pristine BAPbBr, resulting in a longer electron relaxation time. By developing a heterostructure platform with 2D BAPbBr and MoS hybrid materials, this work provides a unique opportunity to understand and tailor carrier dynamics, interfacial coupling, and long-lived hot electrons, ultimately enhancing the efficiency of optoelectronic devices.
在此,我们研究了二维(2D)BAPbBr钙钛矿及其与MoS的异质结构中的载流子-声子弛豫过程。在二维钙钛矿与单层MoS的范德华异质结构中观察到了能量转移,导致MoS的光致发光强度增强。利用飞秒泵浦-探测光谱研究了原始二维材料及其异质结构的载流子和晶格动力学。引入了广义双温度模型,以在电子和晶格弛豫动力学的速率方程中纳入电子冷却的竞争效应。与原始BAPbBr相比,BAPbBr/MoS异质结构中的热声子瓶颈效应增强得更多,导致电子弛豫时间更长。通过开发二维BAPbBr和MoS混合材料的异质结构平台,这项工作为理解和调控载流子动力学、界面耦合以及长寿命热电子提供了独特的机会,最终提高光电器件的效率。