Photoelectric Performance of Two-Dimensional n-MoS Nanosheets/p-Heavily Boron-Doped Diamond Heterojunction at High Temperature.

Two-dimensional (2D) n-MoS nanosheets (NSs) synthesized via the sol-gel method were deposited onto p-type heavily boron-doped diamond (BDD) film to form a n-MoS/p-degenerated BDD (DBDD) heterojunction device. The PL emission results for the heterojunction suggest strong potential for applications using yellow-light-emitting optoelectronic devices. From room temperature (RT) to 180 °C, the heterojunction exhibits typical rectification characteristics with good results for thermal stability, rectification ratio, forward current decrease, and reverse current increase. Compared with the n-MoS/p-lightly B-doped (non-degenerate) diamond heterojunction, the heterojunction demonstrates a significant improvement in both its rectification ratio and ideal factor. At 100 °C, the rectification ratio reaches the maximum value and is considered an ideal high temperature for achieving optimal heterojunction performance. When the temperature exceeds 140 °C, the heterojunction transforms into the Zener diode. The heterojunction's electrical temperature dependence is due to the Fermi level shifting resulting in the weakening of the carrier interband tunneling injection. The n-MoS NSs/p-DBDD heterojunction will broaden future research application prospects in the field of high-temperature consumption in future optoelectronic devices.