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毫米波频段采用缺陷接地结构的可调滤波器。

Tunable Filters Using Defected Ground Structures at Millimeter-Wave Frequencies.

作者信息

Annam Kaushik, Alemayehu Birhanu, Shin Eunsung, Subramanyam Guru

机构信息

Center of Excellence for Thin-Film Research and Surface Engineering (CETRASE), Department of Electrical and Computer Engineering, University of Dayton, Dayton, OH 45469, USA.

出版信息

Micromachines (Basel). 2024 Dec 31;16(1):60. doi: 10.3390/mi16010060.

DOI:10.3390/mi16010060
PMID:39858715
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11767510/
Abstract

This paper explores the potential of phase change materials (PCM) for dynamically tuning the frequency response of a dumbbell u-slot defected ground structure (DGS)-based band stop filter. The DGSs are designed using co-planar waveguide (CPW) line structure on top of a barium strontium titanate (BaSrTiO) (BST) thin film. BST film is used as the high-dielectric material for the planar DGS. Lower insertion loss of less than -2 dB below the lower cutoff frequency, and enhanced band-rejection with notch depth of -39.64 dB at 27.75 GHz is achieved by cascading two-unit cells, compared to -12.26 dB rejection with a single-unit cell using BST thin film only. Further tunability is achieved by using a germanium telluride (GeTe) PCM layer. The electrical properties of PCM can be reversibly altered by transitioning between amorphous and crystalline phases. We demonstrate that incorporating a PCM layer into a DGS device allows for significant tuning of the resonance frequency: a shift in resonance frequency from 30.75 GHz to 33 GHz with a frequency shift of 2.25 GHz is achieved, i.e., 7.32% tuning is shown with a single DGS cell. Furthermore, by cascading two DGS cells with PCM, an even wider tuning range is achievable: a shift in resonance frequency from 27 GHz to 30.25 GHz with a frequency shift of 3.25 GHz is achieved, i.e., 12.04% tuning is shown by cascading two DGS cells. The results are validated through simulations and measurements, showcasing excellent agreement.

摘要

本文探讨了相变材料（PCM）用于动态调谐基于哑铃型U型槽缺陷接地结构（DGS）的带阻滤波器频率响应的潜力。DGS采用共面波导（CPW）线结构设计在钛酸锶钡（BaSrTiO）（BST）薄膜之上。BST薄膜用作平面DGS的高介电材料。与仅使用BST薄膜的单单元相比，通过级联两个单元，在低于下截止频率时实现了低于-2 dB的更低插入损耗，并且在27.75 GHz处具有-39.64 dB的陷波深度的增强带阻。通过使用碲化锗（GeTe）PCM层实现了进一步的可调性。PCM的电学性质可以通过在非晶相和结晶相之间转变而可逆地改变。我们证明，将PCM层纳入DGS器件可实现谐振频率的显著调谐：实现了谐振频率从30.75 GHz到33 GHz的偏移，频率偏移为2.25 GHz，即单个DGS单元显示出7.32%的调谐。此外，通过将两个带有PCM的DGS单元级联，可以实现更宽的调谐范围：实现了谐振频率从27 GHz到30.25 GHz的偏移，频率偏移为3.25 GHz，即通过级联两个DGS单元显示出12.04%的调谐。通过仿真和测量验证了结果，显示出极佳的一致性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/e560c0df7a06/micromachines-16-00060-g017a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/2d4c03f9971d/micromachines-16-00060-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/92c5baea10ec/micromachines-16-00060-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/a881953956cd/micromachines-16-00060-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/21efe23b3348/micromachines-16-00060-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/e09ec5981c8c/micromachines-16-00060-g005a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/0865b2e1df1a/micromachines-16-00060-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/89d1f9bc37e1/micromachines-16-00060-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/e692cfadbe99/micromachines-16-00060-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/2f894ccacc95/micromachines-16-00060-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/05ea50d3e64a/micromachines-16-00060-g010a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/481a747ebf11/micromachines-16-00060-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/2b824778f445/micromachines-16-00060-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/252784db8fd2/micromachines-16-00060-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/2e14bebb2932/micromachines-16-00060-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/13f116a92d8f/micromachines-16-00060-g015a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/cef432820daf/micromachines-16-00060-g016.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/e560c0df7a06/micromachines-16-00060-g017a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/2d4c03f9971d/micromachines-16-00060-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/92c5baea10ec/micromachines-16-00060-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/a881953956cd/micromachines-16-00060-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/21efe23b3348/micromachines-16-00060-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/e09ec5981c8c/micromachines-16-00060-g005a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/0865b2e1df1a/micromachines-16-00060-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/89d1f9bc37e1/micromachines-16-00060-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/e692cfadbe99/micromachines-16-00060-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/2f894ccacc95/micromachines-16-00060-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/05ea50d3e64a/micromachines-16-00060-g010a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/481a747ebf11/micromachines-16-00060-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/2b824778f445/micromachines-16-00060-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/252784db8fd2/micromachines-16-00060-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/2e14bebb2932/micromachines-16-00060-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/13f116a92d8f/micromachines-16-00060-g015a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/cef432820daf/micromachines-16-00060-g016.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8b4/11767510/e560c0df7a06/micromachines-16-00060-g017a.jpg

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本文引用的文献

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