Li Wen, Sun Dingyue, Shan Yufeng, Zhu Jiaqi, Lu Xinwu, Guo Jing, Shi Jichao, Fang Yongzheng, Dai Ning, Liu Yufeng
Opt Express. 2025 Jan 27;33(2):2954-2967. doi: 10.1364/OE.543542.
Infrared (IR) photodetectors play a crucial role in modern technologies due to their ability to operate in various environmental conditions. This study developed high-performance InSe/GaAs interdiffusion heterostructure photodetectors with broadband response using liquid-phase method. It is believed that an InGaAs layer and InSe have been formed at the interface through the mutual diffusion of elements, resulting in a detection spectral range spanning from 0.45 to 2.7 µm. Consequently, the InSe/GaAs photodetector exhibits notably low noise equivalent power of 6.21 × 10 WHz at 1000 Hz, high photoresponsivity () and detectivity () of 16.22 mA/W and 4.01 × 10 Jones under 0 V with 630 nm wavelength, respectively. At 1550 nm, it achieves a of 0.43 µAW and of 1.07 × 10 Jones under 0 V. This strongly suggests that the interdiffused InSe/GaAs heterostructure is a high performance and low-cost material for broadband responsive photodetectors.
红外（IR）光电探测器由于能够在各种环境条件下工作，在现代技术中发挥着至关重要的作用。本研究采用液相法制备了具有宽带响应的高性能InSe/GaAs互扩散异质结构光电探测器。据信，通过元素的相互扩散，在界面处形成了InGaAs层和InSe，从而使探测光谱范围覆盖0.45至2.7 µm。因此，InSe/GaAs光电探测器在1000 Hz时表现出极低的噪声等效功率，为6.21×10 WHz，在0 V、波长630 nm下具有高光响应度（）和探测率（），分别为16.22 mA/W和4.01×10 Jones。在1550 nm处，在0 V下其实现了0.43 µAW的和1.07×10 Jones的。这有力地表明，互扩散的InSe/GaAs异质结构是用于宽带响应光电探测器的高性能、低成本材料。
