Niu Yingying, Zhou Xin, Gao Wei, Fu Maixia, Duan Yule, Yao Jiandong, Wang Bing, Yang Mengmeng, Zheng Zhaoqiang, Li Jingbo
College of Information Science and Engineering, Henan University of Technology, Zhengzhou 450001, Henan, PR China.
Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, PR China.
ACS Nano. 2023 Jul 25;17(14):13760-13768. doi: 10.1021/acsnano.3c03319. Epub 2023 Jul 10.
Driven by the rapid development of autonomous vehicles, ultrasensitive photodetectors with high signal-to-noise ratio and ultraweak light detection capability are urgently needed. Due to its intriguing attributes, the emerging van der Waals material, indium selenide (InSe), has attracted extensive attention as an ultrasensitive photoactive material. However, the lack of an effective photoconductive gain mechanism in individual InSe inhibits its further application. Herein, we propose a heterostructure photodetector consisting of an InSe photoactive channel, a hexagonal boron nitride (h-BN) passivation layer, and a CsPb(Br/I) quantum dot gain layer. This device manifests a signal-to-noise ratio of 2 × 10 with responsivity of 2994 A/W and detectivity of 4.3 × 10 Jones. Especially, it enables the detection of weak light as low as 0.03 μW/cm. These performance characteristics are ascribed to the interfacial engineering. InSe and CsPb(Br/I) with type-II band alignment promote the separation of photocarriers, while h-BN passivates the impurities on CsPb(Br/I) and promises a high-quality carrier transport interface. Furthermore, this device is successfully integrated into an automatic obstacle avoidance system, demonstrating promising application prospects in autonomous vehicles.
在自动驾驶车辆快速发展的推动下，迫切需要具有高信噪比和超弱光探测能力的超灵敏光电探测器。由于其引人关注的特性，新兴的范德华材料硒化铟（InSe）作为一种超灵敏光活性材料受到了广泛关注。然而，单个InSe中缺乏有效的光电导增益机制限制了其进一步应用。在此，我们提出了一种由InSe光活性通道、六方氮化硼（h-BN）钝化层和CsPb(Br/I)量子点增益层组成的异质结构光电探测器。该器件的信噪比为2×10，响应度为2994 A/W，探测率为4.3×10琼斯。特别是，它能够检测低至0.03 μW/cm的弱光。这些性能特性归因于界面工程。具有II型能带排列的InSe和CsPb(Br/I)促进了光载流子的分离，而h-BN钝化了CsPb(Br/I)上的杂质并保证了高质量的载流子传输界面。此外，该器件成功集成到自动避障系统中，在自动驾驶车辆中展现出广阔的应用前景。
