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电子辐照诱导的CoO降解的透射电子显微镜分析。

Transmission electron microscopy analysis of CoO degradation induced by electron irradiation.

作者信息

Sun Jingying, Li Mei, Liu Hao, Guo Linna, Dong Xin, Liang Chaolun

机构信息

Instrumental Analysis and Research Center, Sun Yat-sen University, Guangzhou 510275, China.

Guangzhou Laboratory, Guangzhou 510005, China.

出版信息

Micron. 2025 Mar;190:103786. doi: 10.1016/j.micron.2025.103786. Epub 2025 Jan 27.

DOI:10.1016/j.micron.2025.103786
PMID:39891987
Abstract

This study presents an investigation into the electron beam damage phenomenon of CoO under transmission electron microscopy (TEM). It was found that after irradiation at a dose rate of 6.78 × 10 e/nms, CoO crystals exhibited surface reconstruction and faceting features. Electron energy loss spectroscopy (EELS) analysis indicates that the damage process initiates with the desorption of oxygen anions, which subsequently leads to a reduction in the valence state of cobalt cations and corresponding atomic rearrangement. High resolution TEM (HRTEM) reveals that surface faceting, which has an epitaxial relationship with the bulk, could help maintain the crystal lattice of face-centered cubic (fcc) CoO despite Co-O bond breakage upon beam exposure. With a finely focused electron beam, the hole drilling effect was observed. The structural degradation is proposed to arise from inelastic damage that induced partial desorption of oxygen anions and rearrangement of valence-reduced cobalt cations to epitaxially grow on the surface, suggesting an interplay between irradiation damage and material restructuring. The relative phase stability of CoO, combined with its interfacial structure developed upon irradiation, are beneficial to magnetic loss and interfacial polarization loss, thereby rendering CoO a promising candidate as an effective EMW absorber.

摘要

本研究对氧化钴在透射电子显微镜(TEM)下的电子束损伤现象进行了调查。研究发现,在以6.78×10 e/nm·s的剂量率辐照后,氧化钴晶体呈现出表面重构和刻面特征。电子能量损失谱(EELS)分析表明,损伤过程始于氧阴离子的解吸,随后导致钴阳离子价态降低和相应的原子重排。高分辨率透射电子显微镜(HRTEM)显示,与块体具有外延关系的表面刻面,尽管在电子束照射时Co - O键断裂,但仍有助于维持面心立方(fcc)氧化钴的晶格。使用精细聚焦的电子束时,观察到了钻孔效应。结构退化被认为是由非弹性损伤引起的,这种损伤导致氧阴离子部分解吸以及价态降低的钴阳离子重排,从而在表面外延生长,这表明辐照损伤与材料重构之间存在相互作用。氧化钴的相对相稳定性及其辐照后形成的界面结构,有利于磁损耗和界面极化损耗,从而使氧化钴成为一种有前途的有效电磁吸收体候选材料。

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