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InON薄膜中的铝和锌掺杂及其光学、电学和电致变色特性。

Al and Zn Doping in InON Thin Films and Their Optical, Electrical, and Electrochromic Properties.

作者信息

Zeng Xiangming, Su Jiangbin, Xu Chunyan, Ji Xuemei, Chen Jiahao, He Zuming

机构信息

Jiangxi Provincial Key Laboratory of Power Batteries & Energy Storage Materials, Xinyu University, Xinyu 338004, PR China.

School of New Energy Science and Engineering, Xinyu University, Xinyu 338004, PR China.

出版信息

ACS Omega. 2025 Jan 10;10(3):2528-2538. doi: 10.1021/acsomega.4c06831. eCollection 2025 Jan 28.

DOI:10.1021/acsomega.4c06831
PMID:39895713
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11780445/
Abstract

Indium oxynitride (InON) is a promising material for various applications due to its notable properties, including high mobility, stability, and visible light transparency. Despite its potential, research on InON's electrochromic (EC) properties, especially after doping, remains limited. This study employed DC magnetron sputtering to prepare InON films under various doping conditions. A comprehensive investigation was conducted to examine the impacts of aluminum (Al) and zinc (Zn) doping on the composition, structure, morphology, optical, electrical, and EC characteristics of the InON films. The results indicated that Al doping increased surface amino groups, roughness, and optical band gap while enhancing redox activity. Zn doping introduced ZnO crystalline peaks, smoothed the surface, and reduced the optical bandgap and electrochemical performance. Both doping types negatively affected optical modulation but enabled the tuning of EC response peaks and wavelength ranges. This research underscores the significant role of doping in optimizing the EC performance of InON films, highlighting their potential for advanced applications.

摘要

氮氧化铟（InON）因其显著的性能，包括高迁移率、稳定性和可见光透明度，是一种在各种应用中颇具潜力的材料。尽管具有潜力，但对InON电致变色（EC）性能的研究，尤其是掺杂后的研究仍然有限。本研究采用直流磁控溅射在各种掺杂条件下制备InON薄膜。进行了全面的研究，以考察铝（Al）和锌（Zn）掺杂对InON薄膜的组成、结构、形态、光学、电学和EC特性的影响。结果表明，Al掺杂增加了表面氨基、粗糙度和光学带隙，同时增强了氧化还原活性。Zn掺杂引入了ZnO结晶峰，使表面光滑，并降低了光学带隙和电化学性能。两种掺杂类型均对光调制产生负面影响，但能够调节EC响应峰和波长范围。本研究强调了掺杂在优化InON薄膜EC性能方面的重要作用，突出了它们在先进应用中的潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1756/11780445/9128865f948f/ao4c06831_0011.jpg
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