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零维碳/二维硫化锡纳米花异质结构中的可调谐双向宽带自供电光响应

Tunable Bi-directional Broadband Self-Powered Photoresponse in a 0D C/2-D SnS Nanoflower Heterostructure.

作者信息

Kumar Mahesh, Chen Sheng-Chi, Saravanan Adhimoorthy, Huang Bohr-Ran, Sun Hui

机构信息

Graduate Institute of Electro-Optical Engineering and Department of Electronic and Computer, Engineering, National Taiwan University of Science and Technology, Taipei, 106, Taiwan.

Department of Materials Engineering and Center for Plasma and Thin Film Technologies, Ming Chi University of Technology, New Taipei City, 243, Taiwan.

出版信息

Small. 2025 Jun;21(22):e2411859. doi: 10.1002/smll.202411859. Epub 2025 Feb 9.

DOI:10.1002/smll.202411859
PMID:39924784
Abstract

Realizing bidirectional photodetection is essential for developing next-generation artificial neuromorphic systems, visual information processing, and future optoelectronic logic gates. Photodetectors are promising visible light communication systems due to their energy efficiency and cost-effectiveness. Color shift keying is frequently used in visible light communication to meet non-negative light intensity modulation demands. However, requiring a minimum of two photodetectors with filters to decode optical signals raises the device cost and complicates the communication system. Here, novel bidirectional photo response of 0-D C/2-D SnS nanoflower heterostructure for self-powered broadband photodetector synthesis using sol-gel methods is presented. The photodetector exhibits significantly enhanced currents, with increases of ≈17000% (365 nm), 8750% (456 nm), 3333% (532 nm), 17647% (632 nm), and 124500% (850 nm) under zero bias, compared to C. Furthermore, by adjusting the wavelength of the incident light, controllable bidirectional photoresponse (negative for wavelength = 365 nm and positive for 456-850 nm wavelengths) is achieved through the C/SnS, owing to the synergistic interplay between the photothermoelectric effect of C and the photovoltaic effect of SnS. Polarity switching bestows multifunctional attributes upon photoelectric devices, potentially providing innovative approaches to overcome conventional challenges and fulfill the demands of emergent technological paradigms.

摘要

实现双向光电探测对于开发下一代人工神经形态系统、视觉信息处理以及未来的光电逻辑门至关重要。由于其能源效率和成本效益,光电探测器在可见光通信系统中具有广阔前景。在可见光通信中,常采用色移键控来满足非负光强度调制要求。然而,解码光信号至少需要两个带滤波器的光电探测器,这增加了设备成本并使通信系统复杂化。在此,我们展示了一种采用溶胶 - 凝胶法合成用于自供电宽带光电探测器的0 - D C/2 - D SnS纳米花异质结构的新型双向光响应。与C相比,该光电探测器在零偏压下呈现出显著增强的电流,在365 nm处增加了约17000%,456 nm处增加了8750%,532 nm处增加了3333%,632 nm处增加了17647%,850 nm处增加了124500%。此外,通过调整入射光的波长,由于C的光热电效应和SnS的光伏效应之间的协同相互作用,通过C/SnS实现了可控的双向光响应(波长为365 nm时为负,456 - 850 nm波长时为正)。极性切换赋予了光电器件多功能属性,有可能为克服传统挑战和满足新兴技术范式的需求提供创新方法。

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