Ye Taikang, Tian Dadi, Wu Dan, Sun Xiao Wei, Wang Kai
State Key Laboratory of Optical Fiber and Cable Manufacture Technology, Institute of Nanoscience and Applications, and Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore.
Nanophotonics. 2025 Jan 8;14(2):241-251. doi: 10.1515/nanoph-2024-0543. eCollection 2025 Feb.
As a highly competitive display technology, the realization of pixelated full color quantum dot light emitting diodes (QLEDs) is an indispensable step for high resolution display. Meanwhile, with the rise of near eye display, a submicron pixel size is required for a high-resolution display within a small area less than 1 inch. However, the realization of submicron full color quantum dot pixels by direct patterning is still a big challenge. In this work, we propose a topological meta-mirror structure for the realization of submicron RGB QLEDs. The pixelated topological meta-mirror is introduced with a sufficient design freedom. A powerful light manipulation capability is offered by the topological meta-mirror even with limited period number, which enables the construction of RGB meta-cavities. The pure RGB emissions from meta-cavities can be realized with energy ratios larger than 88 % based on optimized topological meta-mirrors. For a subpixel size of 1 μm, the energy ratios for target color emission can still be larger than 85 %, which indicates a pure color emission. And a minimum subpixel size of 0.6 μm and an ultra-high pixel density of 21,666 pixel per inch can be realized with a 3 × 3 topological meta-mirror array. The proposed meta-cavity structure based on topological meta-mirror provides a new technique route for full color QLEDs especially for high pixel density required scenarios.
作为一种极具竞争力的显示技术，像素化全彩量子点发光二极管（QLED）的实现是高分辨率显示不可或缺的一步。与此同时，随着近眼显示的兴起，在小于1英寸的小面积内实现高分辨率显示需要亚微米级的像素尺寸。然而，通过直接图案化实现亚微米全彩量子点像素仍然是一个巨大的挑战。在这项工作中，我们提出了一种用于实现亚微米RGB QLED的拓扑超表面结构。像素化拓扑超表面具有足够的设计自由度。即使周期数有限，拓扑超表面也具有强大的光操控能力，这使得RGB超腔的构建成为可能。基于优化的拓扑超表面，超腔可以实现能量比大于88%的纯RGB发射。对于1μm的子像素尺寸，目标颜色发射的能量比仍可大于85%，这表明实现了纯色发射。使用3×3拓扑超表面阵列可以实现0.6μm的最小子像素尺寸和每英寸21,666像素的超高像素密度。所提出的基于拓扑超表面的超腔结构为全彩QLED，特别是对于需要高像素密度的场景提供了一种新的技术路线。
