Institute of Optoelectronic Technology, Fuzhou University , Fuzhou 350002, People's Republic of China.
TCL Corperate Research , Shenzhen 518057, People's Republic of China.
ACS Appl Mater Interfaces. 2017 Aug 2;9(30):25506-25512. doi: 10.1021/acsami.7b05381. Epub 2017 Jul 19.
Quantum dot light emitting diodes (QLEDs) are increasingly attractive owing to their compatibility with the inkjet printing process and potential application in low-cost large-area full-color pixelated display. The strategy for controlling the morphology of the quantum dot layer is definitely critical for realizing all-solution processed QLEDs with high performance, which certainly requires in-depth thinking regarding the design of ink composition and their optimization in the printing process. Herein, by carefully controlling the quantum dot ink composition and physicochemical properties, we demonstrate that the viscosity, contact angle, and the three-phase contact line moving would affect the final morphology of the quantum dot film formed by inkjet printing. We achieved coffee ring-free and low-roughness quantum dot film, and all-solution processed QLEDs with normal structure were fabricated for the first time. The devices have a low turn-on voltage of 2.0 V, a luminance of 12100 cd/m at the voltage of 12 V, and a maximum current efficiency of 4.44 cd/A at the luminance of 1974 cd/m, which is the best result to date for inkjet-printed red QLEDs. The results will pave the way for future application of inkjet printing in solution processed pixelated QLED display.
量子点发光二极管(QLED)由于其与喷墨打印工艺的兼容性以及在低成本大面积全彩色像素化显示中的潜在应用而越来越受到关注。控制量子点层形态的策略对于实现高性能的全溶液处理 QLED 绝对至关重要,这肯定需要深入考虑墨水组成的设计及其在打印过程中的优化。在此,我们通过仔细控制量子点墨水的组成和物理化学性质,证明了粘度、接触角和三相接触线的移动会影响喷墨打印形成的量子点膜的最终形态。我们实现了无咖啡环和低粗糙度的量子点膜,并首次制备了具有正常结构的全溶液处理 QLED。该器件的开启电压低至 2.0 V,在 12 V 电压下亮度为 12100 cd/m,在 1974 cd/m 的亮度下最大电流效率为 4.44 cd/A,这是喷墨打印红光 QLED 的最佳结果。这些结果将为喷墨打印在溶液处理像素化 QLED 显示中的未来应用铺平道路。