Li Bing'e, Xing Jiangping, Budnik Valeriya, Liu Chuangping, Cao Qinghua, Xie Fobao, Zhang Xiaoli, Liu Hui, Stsiapanau Andrei, Sun Xiao Wei
School of Physics and Optoelectronic Engineering, Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications, Guangdong University of Technology, Guangzhou 510006, China.
Department of Micro- and Nanoelectronics, Belarusian State University of Informatics and Radioelectronics (BSUIR), Minsk 220013, Republic of Belarus.
ACS Appl Mater Interfaces. 2025 Mar 5;17(9):14269-14277. doi: 10.1021/acsami.4c22563. Epub 2025 Feb 23.
Inverted perovskite solar cells (PSCs) have achieved great development, contributed by the advance of self-assembled monolayer (SAM) hole-transporting layers (HTLs) due to their distinctive molecular designability. However, SAM HTLs still present challenges of achieving a compact and ordered surface, resulting in vacancies and defects at the interface as well as adversely affecting the growth of perovskites. In this work, we propose a micromolecule postdeposition process to design the SAM HTL interface and form high-quality perovskites to achieve highly efficient inverted PSCs. We introduce etidronic acid (EA) as a postdeposition micromolecule to fill and reduce vacancies at the SAM interface and to improve growing high-quality perovskites. The postdeposition EA can anchor to the substrate through P-OH anchors, occupying vacancies left by MeO-4PACz, and simultaneously create interaction with perovskites by P═O and C-OH functional groups. The micromolecule postdeposition process effectively fills and reduces vacancies at the SAM interface, passivates defects of perovskites, and facilitates carrier transport. Consequently, a champion PCE of 24.42% is achieved for the target PSCs, which is much higher than the efficiency (20.08%) of the control. This research provides a guided and widely applicable strategy for the development of the SAM interface and further advances the performance of PSCs.
倒置钙钛矿太阳能电池(PSCs)取得了巨大的发展,这得益于自组装单分子层(SAM)空穴传输层(HTLs)的进步,因其独特的分子可设计性。然而,SAM HTLs在实现致密且有序的表面方面仍面临挑战,导致界面处出现空位和缺陷,并对钙钛矿的生长产生不利影响。在这项工作中,我们提出一种小分子后沉积工艺来设计SAM HTL界面并形成高质量的钙钛矿,以实现高效的倒置PSCs。我们引入乙二膦酸(EA)作为后沉积小分子,以填充和减少SAM界面处的空位,并改善高质量钙钛矿的生长。后沉积的EA可以通过P-OH锚定在基底上,占据MeO-4PACz留下的空位,并同时通过P═O和C-OH官能团与钙钛矿产生相互作用。小分子后沉积工艺有效地填充和减少了SAM界面处的空位,钝化了钙钛矿的缺陷,并促进了载流子传输。因此,目标PSCs实现了24.42%的最佳功率转换效率(PCE),远高于对照组的效率(20.08%)。这项研究为SAM界面的开发提供了一种具有指导意义且广泛适用的策略,并进一步提升了PSCs的性能。