Wang Xiangqi, Wang Cong, Wang Yupeng, Ye Chunhui, Rahman Azizur, Zhang Min, Son Suhan, Tan Jun, Zhang Zengming, Ji Wei, Park Je-Geun, Zhang Kai-Xuan
Testing Center, Jihua Laboratory, Foshan 528000, China.
Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, School of Physics, Renmin University of China, Beijing 100872, China.
ACS Nano. 2025 Mar 4;19(8):8108-8117. doi: 10.1021/acsnano.4c16450. Epub 2025 Feb 18.
van der Waals (vdW) magnets, with their two-dimensional (2D) atomic structures, provide a unique platform for exploring magnetism on the nanoscale. Although there have been numerous reports on their diverse quantum properties, the emergent interfacial magnetism─artificially created at the interface between two layered magnets─remains largely unexplored. This work presents observations of such emergent interfacial magnetism at the ferromagnet-antiferromagnet interface in a vdW heterostructure. We report the discovery of an intermediate Hall resistance plateau in the anomalous Hall loop indicative of emergent interfacial antiferromagnetism fostered by the heterointerface. This plateau can be stabilized and further manipulated under varying pressures but collapses at high pressures over 10 GPa. Our theoretical calculations reveal that charge transfer at the interface is pivotal in establishing the interlayer antiferromagnetic spin-exchange interaction. This work illuminates the previously unexplored emergent interfacial magnetism at a vdW interface comprising a ferromagnetic metal and an antiferromagnetic insulator and highlights its gradual evolution under increasing pressure. These findings enrich the portfolio of emergent interfacial magnetism and support further investigations of vdW magnetic interfaces and the development of next-generation spintronic devices.
范德华（vdW）磁体具有二维（2D）原子结构，为在纳米尺度上探索磁性提供了一个独特的平台。尽管已有大量关于其多样量子特性的报道，但在两层磁体界面人工产生的新兴界面磁性在很大程度上仍未得到探索。这项工作展示了在范德华异质结构中铁磁体 - 反铁磁体界面处这种新兴界面磁性的观测结果。我们报告了在反常霍尔回路中发现一个中间霍尔电阻平台，这表明异质界面促进了新兴界面反铁磁性。该平台在不同压力下可以稳定并进一步调控，但在超过10 GPa的高压下会消失。我们的理论计算表明，界面处的电荷转移对于建立层间反铁磁自旋交换相互作用至关重要。这项工作揭示了在由铁磁金属和反铁磁绝缘体组成的范德华界面处以前未被探索的新兴界面磁性，并突出了其在压力增加时的逐渐演变。这些发现丰富了新兴界面磁性的研究范畴，并为范德华磁性界面的进一步研究以及下一代自旋电子器件的开发提供了支持。
