Gong Tingrui, Ma Chuangwei, Li Lianghui, Gao Lei, Cao Linwei, Shi Maolin, Li Juntao, Su Wei
Microsystem & Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, Sichuan, China.
Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, Sichuan, China.
ACS Appl Mater Interfaces. 2025 Mar 19;17(11):17008-17017. doi: 10.1021/acsami.4c19653. Epub 2025 Mar 5.
The development of high-performance thin-film thermoelectric coolers (TFTECs) that are compatible with standard integrated circuit processes and can reduce power consumption is critical to achieving large-scale applications. In this work, we fabricate a planar TFTEC based on nanocrystalline p-type BiSbTe and n-type BiTe thin films using magnetron sputtering, standard lithography, and postannealing processes. The power factors of the BiSbTe and BiTe thin films reach 3.63 and 4.28 mW/mK, respectively, and the ZT values reach 0.82 and 0.93, which are comparable to those of bulk TE materials. The radial configuration of the device allows the cold-side thermal resistance to be increased and the hot-side thermal resistance to be decreased, thereby facilitating a substantial cooling temperature difference. Furthermore, the large in-plane contact area helps to reduce device resistance and power consumption. At a heating stage temperature of 360 K and a power consumption of 4.76 mW, the net cooling temperature difference of the TFTEC reaches 4 °C. The maximum temperature difference between the hot end and the cold end is 7.26 °C, while the cold end temperature remains below the ambient temperature. The high-performance planar TFTECs demonstrated in this work exhibit both a high net cooling performance and competitive fabrication cost, rendering them ideal for on-chip hotspot cooling.
开发与标准集成电路工艺兼容且能降低功耗的高性能薄膜热电冷却器(TFTEC)对于实现大规模应用至关重要。在这项工作中,我们使用磁控溅射、标准光刻和后退火工艺,基于纳米晶p型BiSbTe和n型BiTe薄膜制造了一种平面TFTEC。BiSbTe和BiTe薄膜的功率因数分别达到3.63和4.28 mW/mK,ZT值达到0.82和0.93,与块状热电材料相当。该器件的径向配置使冷端热阻增加,热端热阻降低,从而有利于产生较大的冷却温差。此外,较大的面内接触面积有助于降低器件电阻和功耗。在加热阶段温度为360 K且功耗为4.76 mW时,TFTEC的净冷却温差达到4°C。热端和冷端之间的最大温差为7.26°C,而冷端温度保持在环境温度以下。这项工作中展示的高性能平面TFTEC兼具高净冷却性能和有竞争力的制造成本,使其成为片上热点冷却的理想选择。