Shi Lei, Zhou Na, Wu Jintao, Shi Meng, Shi Yizhi, Lei Cheng, Mao Haiyang
Key Laboratory of Micro/Nano Devices and Systems, North University of China, Ministry of Education, Taiyuan 030051, China.
Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
Micromachines (Basel). 2025 Jan 21;16(2):116. doi: 10.3390/mi16020116.
Polysilicon is widely used as a thermoelectric material due to its CMOS compatibility and tunability through doping. The accurate measurement of the thermoelectric parameters-such as the Seebeck coefficient, thermal conductivity, and electrical resistivity-of polysilicon with various doping conditions is essential for designing and fabricating high-performance thermopile sensors. This work presents an all-in-one testing chip that incorporates double-layer thermoelectric structures on a suspended membrane-based supporting layer, with polysilicon constituting at least one of these thermoelectric layers. By employing a differential calculation approach in conjunction with thermal imaging methods, we could simultaneously measure various thermoelectric parameters-including resistivity, the Seebeck coefficient, and thermal conductivity-of polysilicon under different doping conditions. Furthermore, the method proposed in this study provides a means for accurately obtaining thermoelectric parameters for other materials, thereby facilitating the design and optimization of thermoelectric devices.
多晶硅因其与CMOS的兼容性以及通过掺杂实现的可调性而被广泛用作热电材料。准确测量不同掺杂条件下多晶硅的热电参数，如塞贝克系数、热导率和电阻率，对于设计和制造高性能热电堆传感器至关重要。这项工作展示了一种一体化测试芯片，该芯片在基于悬浮膜的支撑层上集成了双层热电结构，其中多晶硅构成了这些热电层中的至少一层。通过结合热成像方法采用差分计算方法，我们能够同时测量不同掺杂条件下多晶硅的各种热电参数，包括电阻率、塞贝克系数和热导率。此外，本研究中提出的方法为准确获取其他材料的热电参数提供了一种手段，从而有助于热电装置的设计和优化。
