Liu Liping, Chen Zongsheng, Li Zhigang, Chang Yajing, Li Pengfei, Liu Xun, Deng Xuesong, Feng Yunsong
Advanced Laser Technology Laboratory of Anhui Province, College of Electronic Engineering, National University of Defense Technology, Hefei 230037, China.
School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, China.
Nanomaterials (Basel). 2025 Mar 5;15(5):399. doi: 10.3390/nano15050399.
The compatibility of low infrared emission and wideband microwave absorption has drawn extensive attention, both theoretically and practically. In this paper, an infrared-radar-compatible stealth metasurface is designed using transparent conductive materials, namely indium tin oxide (ITO) and poly methacrylimide (PMI). The designed structure is a combination of a radar-absorbing layer (RAL) and a low-infrared-emission layer (IRSL), with an overall thickness of about 1.7 mm. It consists of three layers, a top-layer patch-type ITO frequency-selective surface, an intermediate layer of a four-fold rotationally symmetric ITO patterned structure, and a bottom reflective surface. The layers are separated by PMI. Simulation results show that the structure achieves over 90% broadband absorption in the microwave band from 7 to 58 GHz and low emissivity of 0.36 in the infrared band. In addition, due to the four-fold rotationally symmetric design, the structure also exhibits polarization insensitivity and excellent angular stability. Therefore, the designed structure possesses ultra-broadband radar absorption performance, low infrared emissivity, and polarization-insensitive properties at a thin thickness, and has a promising application in the field of multi-band-compatible stealth technology.
低红外发射与宽带微波吸收的兼容性在理论和实际应用方面都引起了广泛关注。本文利用透明导电材料,即氧化铟锡(ITO)和聚甲基丙烯酰亚胺(PMI),设计了一种红外 - 雷达兼容的隐身超表面。所设计的结构是雷达吸收层(RAL)和低红外发射层(IRSL)的组合,总厚度约为1.7毫米。它由三层组成,顶层为贴片型ITO频率选择表面,中间层为四重旋转对称的ITO图案化结构,底层为反射面。各层由PMI隔开。仿真结果表明,该结构在7至58 GHz的微波频段实现了超过90%的宽带吸收,在红外频段的发射率低至0.36。此外,由于四重旋转对称设计,该结构还表现出极化不敏感性和优异的角度稳定性。因此,所设计的结构在薄厚度下具有超宽带雷达吸收性能、低红外发射率和极化不敏感特性,在多频段兼容隐身技术领域具有广阔的应用前景。