• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

热电半导体埃斯凯硼矿中的p-n转变

p-n Transition in Thermoelectric Semiconductor Eskebornite.

作者信息

Ryu Jaejong, Kim Il-Ho

机构信息

Department of Materials Science and Engineering, College of Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea.

出版信息

Materials (Basel). 2025 Mar 2;18(5):1129. doi: 10.3390/ma18051129.

DOI:10.3390/ma18051129
PMID:40077353
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11901755/
Abstract

Eskebornite (CuFeSe) is a I-III-VI semiconductor with a tetragonal crystal structure, known for its intriguing electrical and magnetic properties. However, experimental studies on this material remain scarce. In this study, Ni-doped eskebornite, CuNiFeSe (x = 0.02-0.06), was synthesized via solid-state methods by substituting Ni for Cu. Mechanical alloying was employed to prepare the compounds, followed by hot pressing. X-ray diffraction analysis revealed the eskebornite phase alongside a minor secondary phase, identified as penroseite (NiSe) with a cubic crystal structure. Thermoelectric properties were measured over the temperature range of 323-623 K. The Seebeck coefficient exhibited p-type behavior at low temperatures but transitioned to n-type at higher temperatures, indicating a temperature-dependent p-n transition due to changes in the dominant charge carriers. With increasing Ni doping, the Seebeck coefficient increased positively at low temperatures and negatively at high temperatures, with the p-n transition temperature shifting to lower values. Electrical conductivity decreased with higher Ni doping levels, while its positive temperature dependence became more pronounced, reflecting non-degenerate semiconductor behavior. Thermal conductivity showed a negative temperature dependence but increased with higher Ni content. The highest thermoelectric performance was observed for CuNiFeSe, achieving ZT = 0.30 × 10 at 523 K, and for CuNiFeSe, achieving ZT = 0.55 × 10 at 623 K, where ZT and ZT represent the dimensionless figure of merit for p-type and n-type thermoelectric materials, respectively.

摘要

埃斯凯硼镍矿(CuFeSe)是一种具有四方晶体结构的I-III-VI族半导体,以其有趣的电学和磁学性质而闻名。然而,对这种材料的实验研究仍然很少。在本研究中,通过用Ni替代Cu的固态方法合成了Ni掺杂的埃斯凯硼镍矿CuNiFeSe(x = 0.02 - 0.06)。采用机械合金化制备化合物,随后进行热压。X射线衍射分析表明,除了一个次要的次生相外,还存在埃斯凯硼镍矿相,该次生相被鉴定为具有立方晶体结构的彭罗斯矿(NiSe)。在323 - 623 K的温度范围内测量了热电性能。塞贝克系数在低温下表现出p型行为,但在较高温度下转变为n型,这表明由于主要载流子的变化导致了温度依赖性的p - n转变。随着Ni掺杂量的增加,塞贝克系数在低温下呈正向增加,在高温下呈负向增加,p - n转变温度向更低的值移动。电导率随着Ni掺杂水平的提高而降低,而其正温度依赖性变得更加明显,这反映了非简并半导体行为。热导率表现出负温度依赖性,但随着Ni含量的增加而增加。对于CuNiFeSe,在523 K时实现了ZT = 0.30×10,对于CuNiFeSe,在623 K时实现了ZT = 0.55×10,其中ZT和ZT分别代表p型和n型热电材料的无量纲品质因数。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/8327e5394e76/materials-18-01129-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/658f1e8e67ff/materials-18-01129-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/28569a8b15d6/materials-18-01129-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/1eba6ae8f417/materials-18-01129-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/e8ea7041cd2a/materials-18-01129-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/c2ea521372c5/materials-18-01129-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/a9bc93d3e421/materials-18-01129-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/6e17afc8d9ea/materials-18-01129-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/45144ec50d53/materials-18-01129-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/e503531e113d/materials-18-01129-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/f57a74fa186e/materials-18-01129-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/8327e5394e76/materials-18-01129-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/658f1e8e67ff/materials-18-01129-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/28569a8b15d6/materials-18-01129-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/1eba6ae8f417/materials-18-01129-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/e8ea7041cd2a/materials-18-01129-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/c2ea521372c5/materials-18-01129-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/a9bc93d3e421/materials-18-01129-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/6e17afc8d9ea/materials-18-01129-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/45144ec50d53/materials-18-01129-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/e503531e113d/materials-18-01129-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/f57a74fa186e/materials-18-01129-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a14/11901755/8327e5394e76/materials-18-01129-g011.jpg

相似文献

1
p-n Transition in Thermoelectric Semiconductor Eskebornite.热电半导体埃斯凯硼矿中的p-n转变
Materials (Basel). 2025 Mar 2;18(5):1129. doi: 10.3390/ma18051129.
2
Solid-State Synthesis and Thermoelectric Properties of CuFeSe-CuFeS Solid Solutions.CuFeSe-CuFeS固溶体的固态合成及热电性能
Materials (Basel). 2025 Mar 19;18(6):1366. doi: 10.3390/ma18061366.
3
Chalcopyrite CuFeS: Solid-State Synthesis and Thermoelectric Properties.黄铜矿CuFeS₂:固态合成及热电性能
Materials (Basel). 2024 Nov 11;17(22):5497. doi: 10.3390/ma17225497.
4
Thermoelectric Performance of Non-Stoichiometric Permingeatite CuSbSe.非化学计量透辉石CuSbSe₂的热电性能
Materials (Basel). 2024 Sep 2;17(17):4345. doi: 10.3390/ma17174345.
5
Phase Transitions and Thermoelectric Properties of Charge-Compensated ZnCuSbSe.电荷补偿型ZnCuSbSe的相变与热电性能
Materials (Basel). 2024 Jul 3;17(13):3282. doi: 10.3390/ma17133282.
6
Boosting High Thermoelectric Performance of Ni-Doped CuS by Significantly Reducing Thermal Conductivity.通过显著降低热导率提高镍掺杂硫化铜的高热电性能
ACS Appl Mater Interfaces. 2020 Feb 19;12(7):8385-8391. doi: 10.1021/acsami.9b18078. Epub 2020 Feb 11.
7
Ambient scalable synthesis of surfactant-free thermoelectric CuAgSe nanoparticles with reversible metallic-n-p conductivity transition.环境可扩展合成无表面活性剂的热电器件 CuAgSe 纳米粒子,具有可逆的金属-半导体导电性转变。
J Am Chem Soc. 2014 Dec 17;136(50):17626-33. doi: 10.1021/ja510433j. Epub 2014 Dec 4.
8
High Thermoelectric Performance in Chalcopyrite CuAgGaTe-ZnTe: Nontrivial Band Structure and Dynamic Doping Effect.黄铜矿CuAgGaTe-ZnTe中的高热电性能:非平凡能带结构和动态掺杂效应
J Am Chem Soc. 2022 May 25;144(20):9113-9125. doi: 10.1021/jacs.2c02726. Epub 2022 May 10.
9
Thermoelectric Properties of Zn-Doped YbMgZnBi.锌掺杂镱镁锌铋的热电性能
Materials (Basel). 2024 Feb 20;17(5):973. doi: 10.3390/ma17050973.
10
DFT-based computational investigation of the structural, electronic, and thermoelectric properties of transition-metal hydride VH.基于密度泛函理论的过渡金属氢化物VH的结构、电子和热电性质的计算研究
J Mol Model. 2024 Dec 21;31(1):28. doi: 10.1007/s00894-024-06238-y.

本文引用的文献

1
Chalcopyrite CuFeS: Solid-State Synthesis and Thermoelectric Properties.黄铜矿CuFeS₂:固态合成及热电性能
Materials (Basel). 2024 Nov 11;17(22):5497. doi: 10.3390/ma17225497.
2
Influence of Ni ions on the structural, morphological, photoluminescence, photo-catalytic and anti-bacterial studies of CdZnS nanostructures.镍离子对CdZnS纳米结构的结构、形态、光致发光、光催化及抗菌性能的影响研究
J Mater Sci Mater Electron. 2021;32(11):14310-14327. doi: 10.1007/s10854-021-05994-4. Epub 2021 Apr 28.
3
Revised radii of the univalent Cu, Ag, Au and Tl cations.
单价铜、银、金和铊阳离子的修正半径。
Acta Crystallogr B Struct Sci Cryst Eng Mater. 2020 Feb 1;76(Pt 1):38-40. doi: 10.1107/S2052520619015531. Epub 2019 Dec 19.
4
Room-temperature ductile inorganic semiconductor.室温韧性无机半导体。
Nat Mater. 2018 May;17(5):421-426. doi: 10.1038/s41563-018-0047-z. Epub 2018 Apr 9.
5
Colloidal Synthesis and Thermoelectric Properties of CuFeSe₂ Nanocrystals.CuFeSe₂纳米晶体的胶体合成与热电性能
Nanomaterials (Basel). 2017 Dec 26;8(1):8. doi: 10.3390/nano8010008.
6
Achieving High Thermoelectric Figure of Merit in Polycrystalline SnSe via Introducing Sn Vacancies.通过引入锡空位实现多晶硒化锡的高热电优值。
J Am Chem Soc. 2018 Jan 10;140(1):499-505. doi: 10.1021/jacs.7b11875. Epub 2017 Dec 27.
7
Convergence of multi-valley bands as the electronic origin of high thermoelectric performance in CoSb3 skutterudites.多谷能带的收敛是 CoSb3 拓扑半金属中高热电性能的电子起源。
Nat Mater. 2015 Dec;14(12):1223-8. doi: 10.1038/nmat4430. Epub 2015 Oct 5.
8
Heavily doped p-type PbSe with high thermoelectric performance: an alternative for PbTe.具有高热电性能的重掺杂p型PbSe:PbTe的一种替代物。
Adv Mater. 2011 Mar 18;23(11):1366-70. doi: 10.1002/adma.201004200. Epub 2011 Feb 10.
9
Cooling, heating, generating power, and recovering waste heat with thermoelectric systems.利用热电系统进行冷却、加热、发电及回收废热。
Science. 2008 Sep 12;321(5895):1457-61. doi: 10.1126/science.1158899.