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室温韧性无机半导体。

Room-temperature ductile inorganic semiconductor.

作者信息

Shi Xun, Chen Hongyi, Hao Feng, Liu Ruiheng, Wang Tuo, Qiu Pengfei, Burkhardt Ulrich, Grin Yuri, Chen Lidong

机构信息

State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, China.

Shanghai Tech University, Shanghai, China.

出版信息

Nat Mater. 2018 May;17(5):421-426. doi: 10.1038/s41563-018-0047-z. Epub 2018 Apr 9.

Abstract

Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-AgS semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

摘要

延展性在金属及金属基合金中很常见,但在无机半导体和陶瓷绝缘体中却很少见。特别是,室温下具有延展性的无机半导体此前并不为人所知。在此,我们报告了一种无机α-AgS半导体,它在室温下表现出非凡的类金属延展性以及高塑性变形应变。化学键分析表明,该晶体结构中存在原子间相互作用相对较弱的平面体系。由于银的扩散,结合不规则分布的银-银键和硫-银键,它们抑制了材料的解理,从而产生了前所未有的延展性。这项工作为寻找用于柔性电子器件的延展性无机半导体/陶瓷开辟了可能性。

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