Wang Yiping, Choe Jeongheon, Anderson Eric, Li Weijie, Ingham Julian, Arsenault Eric A, Li Yiliu, Hu Xiaodong, Taniguchi Takashi, Watanabe Kenji, Roy Xavier, Basov Dmitri, Xiao Di, Queiroz Raquel, Hone James C, Xu Xiaodong, Zhu X-Y
Department of Chemistry, Columbia University, New York, NY, USA.
Department of Mechanical Engineering, Columbia University, New York, NY, USA.
Nature. 2025 Apr 3. doi: 10.1038/s41586-025-08954-8.
The fractional quantum anomalous Hall (FQAH) effect was recently discovered in twisted MoTe (tMoTe) bilayers. Experiments so far have revealed Chern insulators from hole doping at ν = -1, -2/3, -3/5 and -4/7 (per moiré unit cell). In parallel, theories predict that, between v = -1 and -3, there exist exotic quantum phases, such as the coveted fractional topological insulators, fractional quantum spin Hall (FQSH) states and non-Abelian fractional states. Here we use transient optical spectroscopy on tMoTe to reveal nearly 20 hidden states at fractional fillings that are absent in static optical sensing or transport measurements. A pump pulse selectively excites charge across the correlated or pseudogaps, leading to the disordering (melting) of correlated states. A probe pulse detects the subsequent melting and recovery dynamics by means of exciton and trion sensing. Besides the known states, we observe further fractional fillings between ν = 0 and -1 and a large number of states on the electron doping side (ν > 0). Most importantly, we observe new states at fractional fillings of the Chern bands at ν = -4/3, -3/2, -5/3, -7/3, -5/2 and -8/3. These states are potential candidates for the predicted exotic topological phases. Moreover, we show that melting of correlated states occurs on two distinct timescales, 2-4 ps and 180-270 ps, attributed to electronic and phonon mechanisms, respectively. We discuss the differing dynamics of the electron-doped and hole-doped states from the distinct moiré conduction and valence bands.
分数阶量子反常霍尔(FQAH)效应最近在扭曲的碲化钼(tMoTe)双层中被发现。迄今为止的实验已经揭示了在ν = -1、-2/3、-3/5和-4/7(每莫尔晶胞)的空穴掺杂下的陈绝缘体。与此同时,理论预测,在v = -1和-3之间,存在奇异的量子相,如令人垂涎的分数拓扑绝缘体、分数阶量子自旋霍尔(FQSH)态和非阿贝尔分数态。在这里,我们利用tMoTe上的瞬态光谱揭示了近20个隐藏态,这些态在静态光学传感或输运测量中并不存在。泵浦脉冲选择性地激发穿过相关能隙或赝能隙的电荷,导致相关态的无序化(熔化)。探测脉冲通过激子和三重激子传感检测随后的熔化和恢复动力学。除了已知的态,我们还观察到在ν = 0和-1之间的进一步分数填充以及电子掺杂侧(ν > 0)的大量态。最重要的是,我们在陈能带的分数填充ν = -4/3、-3/2、-5/3、-7/3、-5/2和-8/3处观察到新的态。这些态是预测的奇异拓扑相的潜在候选者。此外,我们表明相关态的熔化发生在两个不同的时间尺度上,分别为2 - 4皮秒和180 - 270皮秒,这分别归因于电子和声子机制。我们讨论了来自不同莫尔导带和价带的电子掺杂态和空穴掺杂态的不同动力学。