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关于原始碳化镁(MgC)单层储氢应用的密度泛函理论研究。

A DFT study for hydrogen storage application on pristine magnesium dicarbide (MgC) monolayer.

作者信息

Ahmed Irfan, Iqrar Ukkasha, Saeed Ashir, Alotaibi Rajeh, Ali Syed Mansoor, Anwar Maida, Khan Muhammad Isa

机构信息

Department of Physics, Rahim Yar Khan Campus, The Islamia University of Bahawalpur Bahawalpur Pakistan

Department of Chemistry, College of Science, King Saud University P. O. BOX 145111 Riyadh Saudi Arabia

出版信息

RSC Adv. 2025 Apr 11;15(15):11409-11416. doi: 10.1039/d5ra00486a. eCollection 2025 Apr 9.

Abstract

The hydrogen storage potential of pure MgC was systematically investigated using density functional theory (DFT) calculations. The phonon dispersion and molecular dynamics (AIMD) simulations confirmed the dynamic and structural stability of MgC, reinforcing its suitability as a promising hydrogen storage material. The electronic structure analysis revealed that pure MgC exhibits semiconducting behavior with a band gap of 0.25 eV, and transforms into a metallic state upon hydrogen adsorption. Hydrogen molecules were adsorbed onto the MgC surface physisorption, with an average adsorption energy of 0.286 eV, indicating moderate binding strength suitable for reversible hydrogen storage. Hirshfeld charge analysis demonstrated that MgC transfers 0.041 e, 0.139 e, and 0.259 e to 1, 4, and 8 hydrogen molecules, respectively, highlighting charge redistribution upon adsorption. The calculated hydrogen storage capacity of 2.05% suggests a feasible adsorption mechanism. Additionally, AIMD simulations at 400 K confirmed that hydrogen adsorption does not induce significant distortions in the MgC framework, further validating its thermal and mechanical stability. These findings underscore the potential of MgC as an efficient hydrogen storage material for sustainable energy applications, offering a promising pathway for the development of next-generation clean energy technologies.

摘要

利用密度泛函理论(DFT)计算系统地研究了纯MgC的储氢潜力。声子色散和分子动力学(AIMD)模拟证实了MgC的动力学和结构稳定性,增强了其作为一种有前景的储氢材料的适用性。电子结构分析表明,纯MgC表现出带隙为0.25 eV的半导体行为,并在氢吸附时转变为金属态。氢分子通过物理吸附吸附在MgC表面,平均吸附能为0.286 eV,表明其结合强度适中,适合可逆储氢。Hirshfeld电荷分析表明,MgC分别向1、4和8个氢分子转移0.041 e、0.139 e和0.259 e,突出了吸附时的电荷重新分布。计算得到的2.05%的储氢容量表明存在一种可行的吸附机制。此外,400 K下的AIMD模拟证实,氢吸附不会在MgC骨架中引起显著畸变,进一步验证了其热稳定性和机械稳定性。这些发现强调了MgC作为可持续能源应用中一种高效储氢材料的潜力,为下一代清洁能源技术的发展提供了一条有前景的途径。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/16a9/11986572/0af0138a6068/d5ra00486a-f1.jpg

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