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通过可逆的Si(IV)/Si(II)氧化还原穿梭实现的亚氨基硅烷的异构化和插入化学。

Isomerisation and Insertion Chemistry of Imidosilanes Enabled by Reversible Si(IV)/Si(II) Redox Shuttling.

作者信息

Tang Jianqin, Wang Yuwen, Crumpton Agamemnon E, McManus Caitilín, Aldridge Simon

机构信息

Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, South Parks Road, Oxford, OX1 3QR, UK.

出版信息

Angew Chem Int Ed Engl. 2025 Jun 24;64(26):e202505872. doi: 10.1002/anie.202505872. Epub 2025 May 16.

Abstract

Spontaneous redox shuttling at silicon is very rare, primarily reflecting the thermodynamic challenges associated with reduction processes for lighter p-block elements. Here we show that the reactions of boryl-substituted silylene {PhC(BuN)}Si{B(NDippCH)} with an organo-azide proceed through a Si(IV)-Si(II)-Si(IV) series of redox processes involving both oxidative and reductive ligand migration steps. Each of the isomeric compounds related through this reaction manifold is isolable (and can be structurally characterised by X-ray crystallography), with the overall free energy profile being close to thermo-neutral. Broader studies within group 14 imply that this redox shuttling is unique to silicon and that reductive ligand migration also plays a role in O-atom insertion chemistry.

摘要

硅的自发氧化还原穿梭现象非常罕见,这主要反映了与较轻的p族元素还原过程相关的热力学挑战。在这里,我们表明,硼基取代的硅烯{PhC(BuN)}Si{B(NDippCH)}与有机叠氮化物的反应通过一系列Si(IV)-Si(II)-Si(IV)氧化还原过程进行,涉及氧化和还原配体迁移步骤。通过该反应体系相关的每种异构体化合物都是可分离的(并且可以通过X射线晶体学进行结构表征),其总体自由能分布接近热中性。第14族内更广泛的研究表明,这种氧化还原穿梭现象是硅独有的,并且还原配体迁移在氧原子插入化学中也起作用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/75d9/12184292/975e64db0f9c/ANIE-64-e202505872-g001.jpg

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